Single Structure Widely Distributed in a GeTe−Sb2Te3 Pseudobinary System: A Rock Salt Structure is Retained by Intrinsically Containing an Enormous Number of Vacancies within its Crystal
Abstract:GeTe(1-x)-Sb2Te3(x) sputtered amorphous film was crystallized into a simple NaCl-type structure through instantaneous laser irradiation over a wide composition range from x = 0 to at least 2/3. When the ratio of Sb2Te3 increases, a vacancy is generated at every Na site for two Sb atoms. The fraction of vacancies, v(x), changes according to x/(1 + 2x), and the cubic root unit cell volume varies with a strong correlation to v(x). Through these created vacancies, valence electrons provided by adjacent Ge/Sb and T… Show more
“…2b. Regardless of the deposition temperatures, the GeTe films were composed of the same phase, with the expected trigonal symmetry [18]. Weak Te peaks were also observed due to the Te-rich composition of the films.…”
The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger's analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te-Te bonds and thereby reduces the barrier to crystal nucleation.
“…2b. Regardless of the deposition temperatures, the GeTe films were composed of the same phase, with the expected trigonal symmetry [18]. Weak Te peaks were also observed due to the Te-rich composition of the films.…”
The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger's analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te-Te bonds and thereby reduces the barrier to crystal nucleation.
“…4,5 At room temperature, samples with 0 Յ x Յ 1 3 crystallize into a deformed NaCl ͑rhombohedral͒ structure and the remainder into an NaCl ͑cubic͒ phase. The NaCl structures are stabilized by vacancies that increase in number as x increases.…”
Section: Discussionmentioning
confidence: 99%
“…The semiconducting nature of c-GST-8,2,11 is closely related to the presence of vacancies on Na sites, which help stabilize the rocksalt structure ͓the p 3 -bonded structure must include 6N͑Te͒ p electrons͔. 5,15 Deviations from the pseudobinary tie line shift the band gap and change conductivity and optical reflectivity. The overall shapes of the DOS profiles display a threeband-structure characteristic of materials with average valence near 5 ͑5.14 for GST-8,2,11͒.…”
Section: B Electronic Structurementioning
confidence: 99%
“…4 Vacancies play an essential role in stabilizing the NaCl structure over a wide range of x. 5 Density-functional calculations have been performed for crystalline structures with compositions ͑GeTe͒ 1−x ͑Sb 2 Te 3 ͒ x and nearby stoichiometries. 6 2 3 , respectively͔͒ suggest that the stability of these compounds is enhanced by maximizing the number of Te atoms surrounded by three Ge and three Sb atoms.…”
“…Extended x-ray absorption fine structure ͑EXAFS͒ measurements on GST have found significant concentrations of Ge-Ge bonds and indications that overcoordinated Te atoms play a role, 12 and there has been renewed focus on the role of vacancies. 13,14 Density functional ͑DF͒ calculations suggest that the metastable structure is consistent with rocksalt symmetry but comprises two units ordered along the ͓111͔ direction. Higher temperatures lead to two-dimensional linear or tangled clusters that are ordered in the perpendicular direction.…”
Phase-change materials are of immense importance for optical recording and computer memory, but the structure of the amorphous phases and the nature of the phase transition in the nanoscale bits pose continuing challenges. Massively parallel density functional simulations have been used to characterize the amorphous structure of the prototype materials Ge 2 Sb 2 Te 5 and GeTe. In both, there is long-ranged order among Te atoms and the crucial structural motif is a four-membered ring with alternating atoms of types A ͑Ge and Sb͒ and B ͑Te͒, an "ABAB square." The rapid amorphous-to-crystalline phase change is a reorientation of disordered ABAB squares to form an ordered lattice. There are deviations from the "8 − N rule" for coordination numbers, with Te having near threefold coordination. Ge atoms are predominantly fourfold coordinated, but-contrary to recent speculation-tetrahedral coordination is found in only approximately one-third of the Ge atoms. The average coordination number of Sb atoms is 3.7, and the local environment of Ge and Sb is usually "distorted octahedral" with AB separations from 3.2 to 4 Å in the first coordination shell. The number of A -A bonds is significantly greater in GeTe than in Ge 2 Sb 2 Te 5 . Vacancies ͑voids͒ in the disordered phases of these materials provide the necessary space for the phase transitions to take place. The vacancy concentration in Ge 2 Sb 2 Te 5 ͑11.8%͒ is greater than in GeTe ͑6.4%͒, which is consistent with the better phase-change performance of the former.
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