Single-step, large-area, variable thickness sputtered WS2 film-based field effect transistors

Acar, Merve; Mobtakeri, Soheil; Efeoǧlu, Hasan; Ertuğrul, Mehmet; Gür, Emre

doi:10.1016/j.ceramint.2020.07.161

Cited by 10 publications

(9 citation statements)

References 48 publications

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“…In order to obtain WS2 thin films in a single step, growth was performed on Si/SiO2 substrates in Argon environment using WS2 target. The growth parameters that affect the WS2 channel thickness with sputtering as shown by our previous article (Acar et al, 2020) and that may affect the ambipolarity behavior other than the thickness are given in the Table 1. It was observed from the samples obtained by sputtering that as the growth time increased, WS2 nano-walls were formed in the structure.…”

Section: Methodsmentioning

confidence: 99%

“…In order to remove the residual residues on the device and to improve the contacts, annealing was performed and the device was made ready for measurement. In this section, mask design, lithography steps, metal coating, lift-off and annealing steps are explained in detail in our previous study (Acar et al, 2020).…”

Section: Methodsmentioning

confidence: 99%

“…Ambipolar transistors carrying both charges further simplify the construction of metal oxide semiconductor devices. In addition, devices that exhibit ambipolar behavior show unipolar behavior due to the return of the material to its natural state at high voltages (Acar, Mobtakeri, Efeoğlu, Ertuğrul, & Gür, 2020).…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Acar

Ertuğrul

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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This paper mainly focused on one of the recent attractive electronic devices which is the ambipolar field-effect transistor. Ambipolarity has become important for many applications in recent years. Many factors that cause ambipolarity have been reported in the literature. However, the causes of ambipolarity have not been fully investigated so far. In this study, the degree of ambipolarity was determined as a function of the channel thickness for the WS2 FET device. For the WS2 FET device, the ambipolarity starts from a few layers of channel thickness, and then as the thickness increases, the ambipolarity begins to decrease again. It has been observed that as the thickness increases, the degree of ambipolarity approaches zero. The fact that the degree of ambipolarity approaches zero indicates that the WS2 channel exhibits natural n-type behavior and the ambipolarity effect disappears.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Acar

Ertuğrul

2021

Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi

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“…In this case, the sputtering method is easiest to produce vertical heterojunctions. A vertical MoSe 2 /WSe 2 p-n heterostructure using a sputtering-CVD method has been reported [72]. The heterostructure is formed as follows; first W film was sputtered on SiO 2 /Si substrate by using sputter, and then sputtered W film was further put in a furnace for selenization.…”

Section: Fet Applications Of Sputtered Tmdcsmentioning

confidence: 99%

“…It needs to be pointed out that the device performances are not as good as the devices produced by the CVD method or the exfoliation method. The common mobility value achieved on these sputtered TMDCs FETs varies between 10 and 20 cm 2 /Vs while I on /I of f ratio varies between 10 2 and 10 7 [39,48,49,51,[66][67][68][69][70][71][72].…”

Section: Fet Applications Of Sputtered Tmdcsmentioning

confidence: 99%

Sputtered 2D transition metal dichalcogenides: from growth to device applications

Acar¹,

Gür²

2021

Turk J Phys

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Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of the current conventional devices such as (which material based for example Si based) field effect transistors (FETs) and photodetectors during the last two decades. This high potential in solid state devices is mostly revealed by the transition metal dichalcogenides (TMDCs) semiconductor materials such as MoS 2 , WS 2 , MoSe 2 and WSe 2 . Therefore, many different methods and approaches have been developed to grow or obtain so far in order to make use them in solid state devices, which is a great challenge in large area applications. Although there are intensively studied methods such as chemical vapor deposition (CVD), mechanical exfoliation, atomic layer deposition, it is sputtering getting attention day by day due to the simplicity of the growth method together with its reliability, large area growth possibility and repeatability. In this review article, we provide benefits and disadvantages of all the growth methods when growing TMDC materials, then focusing on the sputtering TMDC growth strategies performed. In addition, TMDCs for the FETs and photodetector devices grown by RFMS have been surveyed.

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First-principles calculations to explore the oxygen effects on WS2 film in marine environments

Wang

Chen

et al. 2021

Applied Surface Science

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Single-step, large-area, variable thickness sputtered WS2 film-based field effect transistors

Cited by 10 publications

References 48 publications

Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors

Sputtered 2D transition metal dichalcogenides: from growth to device applications

First-principles calculations to explore the oxygen effects on WS2 film in marine environments

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