2019
DOI: 10.1088/2053-1591/ab413a
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Single solid source precursor route to the synthesis of MOCVD Cu-Cd-S thin films

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Cited by 10 publications
(18 citation statements)
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“…In addition, it was observed that the ratio of S/ (Cu + Zn) in the films was not constant, which suggest that the CZS film is non-stoichiometric. It is reasonable to assume that the increase in deposition temperature raises the rate of nucleation of atoms in the precursor and, after that, the elements in the CZS system [24]. Notably, the ambiguity in the XRD analysis (presence of ZnS and ZnO instead of CZS), was reconciled with the RBS studies.…”
Section: Figure 2 Xrd Spectrum Of Czs Films At (A) 370 ᴼC (B) 400 ᴼC (C) 430 ᴼC and (D) 470 ᴼCmentioning
confidence: 99%
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“…In addition, it was observed that the ratio of S/ (Cu + Zn) in the films was not constant, which suggest that the CZS film is non-stoichiometric. It is reasonable to assume that the increase in deposition temperature raises the rate of nucleation of atoms in the precursor and, after that, the elements in the CZS system [24]. Notably, the ambiguity in the XRD analysis (presence of ZnS and ZnO instead of CZS), was reconciled with the RBS studies.…”
Section: Figure 2 Xrd Spectrum Of Czs Films At (A) 370 ᴼC (B) 400 ᴼC (C) 430 ᴼC and (D) 470 ᴼCmentioning
confidence: 99%
“…The RBS measurement showed that the elemental compositions of the deposited material consist of Cu, Zn and S as indicated in Table 1. Furthermore, the peaks of these elements (Cu, Zn and S) were distinguished by the He + beam and used to estimate the linear thickness using the information about the material density as follows [3,24]:…”
Section: Figure 2 Xrd Spectrum Of Czs Films At (A) 370 ᴼC (B) 400 ᴼC (C) 430 ᴼC and (D) 470 ᴼCmentioning
confidence: 99%
“…The behaviour may be associated with the nature of the film (C2), which has the least speed when agitated with electromagnetic radiation [27]. A similar trend has been outlined by Efe et al [13] and Olofinjana et al [14] for crystalline semiconductor thin films and linked the development to the connections between the real constant (εᵣ), refractive index (n) and the extinction coefficient (k) as indicated by Eq. ( 4).…”
Section: Optical Measurementsmentioning
confidence: 80%
“…Also from the table, the band gap energy values were observed to be increasing with increase in deposition time. Generally, band gap energy in semiconducting materials are mostly influenced by their structural defects, crystallinity, impurities, grain sizes as well as grain boundary disorders [18]. Consequently, the observed increase in band gap energy in Pb-Sn-S samples can be explained in terms of the effect of impurities in their lattice system as indicated from the XRD studies.…”
Section: Optical Studiesmentioning
confidence: 97%