Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

Akey, Austin; Recht, Daniel; Williams, James S.; Aziz, Michael J.; Buonassisi, Tonio

doi:10.1002/adfm.201501450

Cited by 24 publications

(23 citation statements)

References 45 publications

(64 reference statements)

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“…These nanoscale features referred to as cellular-breakdown [24,25] (due to the presence of surface features resembling cell walls in plants). In a recent work, the 3D structure and composition of Si cellular-breakdown structures formed in a similar material have been investigated using atom probe tomography technique [26]. In this work, it has been shown that these filamentary structures are formed by transition metals segregation regions with up to a 10 a / o in Si.…”

Section: Resultsmentioning

confidence: 99%

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Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

García-Hemme¹,

Montero²,

García-Hernansanz³

et al. 2016

J. Phys. D: Appl. Phys.

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We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10 K to 300 K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10 20 and 1.3 × 10 21 cm −3 . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wavefunction localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.

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Section: Resultsmentioning

confidence: 99%

“…In this work, it has been shown that these filamentary structures are formed by transition metals segregation regions with up to a 10 a / o in Si. In any case, these structures resulted free of defects presenting no evidence of polycrystalline material neither the formation of silicides [26,27].…”

Section: Resultsmentioning

confidence: 99%

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

García-Hemme¹,

Montero²,

García-Hernansanz³

et al. 2016

J. Phys. D: Appl. Phys.

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show abstract

“…At such concentrations, Au incorporation is unlikely to be substitutional in the lattice but could be localized in high concentrations in spatially inhomogeneous regions, as seen in cellular breakdown. 22 This has been observed in Si supersaturated with transition metals using PLM of ion-implanted 10 and metal filmcoated Si. 23 Thermal annealing at 400 C resulted in dramatic changes to the Raman spectra of the thicker Au-film samples.…”

Section: B Structural Characterizationmentioning

confidence: 87%

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

Chow

Yang

Hudspeth

et al. 2018

Journal of Applied Physics

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We demonstrate that pulsed laser melting (PLM) of thin 1, 5, and 10 nm-thick vapor-deposited gold layers on silicon enhances its room-temperature sub-band gap infrared absorption, as in the case of ion-implanted and PLM-treated silicon. The former approach offers reduced fabrication complexity and avoids implantation-induced lattice damage compared to ion implantation and pulsed laser melting, while exhibiting comparable optical absorptance. We additionally observed strong broadband absorptance enhancement in PLM samples made using 5- and 10-nm-thick gold layers. Raman spectroscopy and Rutherford backscattering analysis indicate that such an enhancement could be explained by absorption by a metastable, disordered and gold-rich surface layer. The sheet resistance and the diode electrical characteristics further elucidate the role of gold-supersaturation in silicon, revealing the promise for future silicon-based infrared device applications.

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“…In this work, it has been shown that these filamentary structures are formed by segregation regions of transition metals with up to 10% of Si atomic density. However, these structures are free of silicides, and no evidence of polycrystalline material was observed [37,38].…”

Section: Resultsmentioning

confidence: 95%

Vanadium supersaturated silicon system: a theoretical and experimental approach

García-Hemme¹,

García²,

Palacios³

et al. 2017

J. Phys. D: Appl. Phys.

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The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 /jm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

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Single‐Phase Filamentary Cellular Breakdown Via Laser‐Induced Solute Segregation

Cited by 24 publications

References 45 publications

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Insulator-to-metal transition in vanadium supersaturated silicon: variable-range hopping and Kondo effect signatures

Observation of enhanced infrared absorption in silicon supersaturated with gold by pulsed laser melting of nanometer-thick gold films

Vanadium supersaturated silicon system: a theoretical and experimental approach

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