Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong band bending in the Si substrate. This bending pushes the surface into inversion. In addition, the substoichiometry of the evaporated MoOx layers leads to a high density of states within the bandgap. This is crucial for charge transport. The J-V electrical characteristics at several temperatures were analysed to elucidate the dominant charge transport mechanisms of this heterojunction structure. We have identified two different transport mechanisms. At low bias voltage, transport is dominated by hole tunneling through the MoOx gap states. At higher voltage the behavior is similar to a Schottky junction with a high barrier value, due to the high MoOx work function. These results provide a better understanding of the hole selective

Photovoltaic solar cells based on the intermediate band (IB) concept could greatly enhance the efficiency of future devices. We have analyzed the electrical and photoconductivity properties of GaP supersaturated with Ti to assess its suitability for IB solar cells. GaP:Ti was obtained by ion implantation followed by pulsed-laser melting (PLM) using an ArF excimer laser. It was found that PLM energy densities between 0.35 and 0.55 J/cm 2 produced a good recovery of the crystalline structure of GaP (both unimplanted and implanted with Ti), as evidenced by high mobility measured values (close to the reference GaP). Outside this energy density window, the PLM failed to recover the crystalline structure producing a low mobility layer that is electrically isolated from the substrate. Spectral photoconductivity measurements were performed by using the van der Pauw set up. For GaP:Ti a significant enhancement of the conductivity was observed when illuminating the sample with photon energies below 2.26 eV, suggesting that this photoconductivity is related to the presence of Ti in a concentration high enough to form an IB within the GaP bandgap. The position of the IB was estimated to be around 1.1 eV from the conduction band or the valence band of GaP, which would lead to maximum theoretical efficiencies of 25% to 35% for a selective absorption coefficients scenario and higher for an overlapping scenario.

In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the energy levels was the thermal admittance spectroscopy. Our experimental results showed that in samples with titanium concentration just under Mott limit there was a relationship among the activation energy value and the capture cross section value. This relationship obeys to the well known Meyer-Neldel rule, which typically appears in processes involving multiple excitations, like carrier capture/emission in deep levels, and it is generally observed in disordered systems. The obtained characteristic Meyer-Neldel parameters were Tmn = 176 K and kTmn = 15 meV. The energy value could be associated to the typical energy of the phonons in the substrate. The almost perfect adjust of all experimental data to the same straight line provides further evidence of the validity of the Meyer Neldel rule, and may contribute to obtain a deeper insight on the ultimate meaning of this phenomenon.

We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline silicon samples with vanadium concentrations that exceed equilibrium values in more than 5 orders of magnitude. Temperature-dependent analysis of the conductivity and Hall mobility values for temperatures from 10 K to 300 K indicate that a transition from an insulating to a metallic phase is obtained at a vanadium concentration between 1.1 × 10 20 and 1.3 × 10 21 cm −3 . Samples in the insulating phase present a variable-range hopping transport mechanism with a Coulomb gap at the Fermi energy level. Electron wavefunction localization length increases from 61 to 82 nm as the vanadium concentration increases in the films, supporting the theory of impurity band merging from delocalization of levels states. On the metallic phase, electronic transport present a dispersion mechanism related with the Kondo effect, suggesting the presence of local magnetic moments in the vanadium supersaturated silicon material.