Single Event Transients in CMOS Ring Oscillators

Prinzie, Jeffrey; Smedt, Valentijn De

doi:10.3390/electronics8060618

Cited by 4 publications

(3 citation statements)

References 22 publications

(27 reference statements)

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“…The high total doses applied in this range of experiments provide a complete evaluation of subthreshold circuits in the whole range of space applications, radiation physics instruments, and medical applications. The authors in [7] discussed a time-variant on Single-Event Transients (SETs) in integrated CMOS ring oscillators. The Impulse Sensitive Function (ISF) of the oscillator was used to analyze the impact of the relative moment when a particle hit the circuit.…”

Section: The Present Issuementioning

confidence: 99%

Radiation Tolerant Electronics

Leroux

2019

Electronics

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Section: The Present Issuementioning

confidence: 99%

Radiation Tolerant Electronics

Leroux

2019

Electronics

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“…The two sets of values were expressed for different time constants versus critical charge Q and LET. The strike of an ionizing particle could be modeled by inserting a current pulse on each P-N junction, with the direction of the injected current depending on the device type [ 33 ], as shown in Figure 12 . Moreover, the effects generated by the injected currents were strongly sensitive to the circuit conditions, requiring the analysis of the system in different states.…”

Section: Simulations Resultsmentioning

confidence: 99%

Analysis and Comparison of Rad-Hard Ring and LC-Tank Controlled Oscillators in 65 nm for SpaceFibre Applications

Monda

Ciarpi

Saponara

2020

Sensors

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This work presented a comparison between two Voltage Controlled Oscillators (VCOs) designed in 65 nm CMOS technology. The first architecture based on a Ring Oscillator (RO) was designed using three Current Mode Logic (CML) stages connected in a loop, while the second one was based on an LC-tank resonator. This analysis aimed to choose a VCO architecture able to be integrated into a rad-hard Phase Locked Loop. It had to meet the requirements of the SpaceFibre protocol, which supports frequencies up to 6.25 GHz, for space applications. The full custom schematic and layout designs are shown, and Single Event Effect simulations results, performed with a double exponential current pulses generator, are presented in detail for both VCOs. Although the RO-VCO performances in terms of technology scaling and high-integration density were attractive, the simulations on the process variations demonstrated its inability to generate the target frequency in harsh operating conditions. Instead, the LC-VCO highlighted a lower influence through Process-Voltage-Temperature simulations on the oscillation frequency. Both architectures were biased with a supply voltage of 1.2 V. The achieved results for the second architecture analyzed were attractive to address the requirements of the new SpaceFibre aerospace standard.

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“…To enable optimizing the radiation-hardness of this initial design by properly sizing the unit cell series resistor, the achievable reduction of SEE sensitivity is quantified using charge injection simulations. These parametric simulations cover multiple dimensions to adequately assess the circuit sensitivity: 1) As expected from the periodic, time-dependent nature of impulse sensitivity function of oscillators [13], SET responses of ring oscillator circuits were also shown to be time-dependent [16]. Therefore, charge injections need to be performed at multiple instants along the oscillation period to identify points of maximum sensitivity.…”

Section: Radiation Effects Simulationsmentioning

confidence: 99%

Radiation-Tolerant Digitally Controlled Ring Oscillator in 65-nm CMOS

Biereigel

Kulis

Leroux

et al. 2022

IEEE Trans. Nucl. Sci.

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This paper presents a radiation-tolerant digitally controlled CMOS ring oscillator design suitable for All-Digital Phase-Locked Loop (ADPLL) implementations. To address the challenges presented by harsh radiation environments, a wide tuning range oscillator architecture is presented with superior Single-Event Effect (SEE) tolerance. The proposed oscillator circuit is characterized experimentally in a 65 nm technology and shown to achieve a significant reduction in SEE sensitivity up to a Linear Energy Transfer (LET) of 63.5 MeV mg −1 cm 2 , remain free from harmonic oscillation errors under irradiation and withstand a total radiation dose exceeding 1.5 Grad. At the design frequency of 1.28 GHz, the oscillator dissipates 7 mW of power while achieving a phase noise of −105 dBc/Hz at 1 MHz offset, corresponding to a Figure of Merit (FOM) of 159 dB.

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Single Event Transients in CMOS Ring Oscillators

Cited by 4 publications

References 22 publications

Radiation Tolerant Electronics

Radiation Tolerant Electronics

Analysis and Comparison of Rad-Hard Ring and LC-Tank Controlled Oscillators in 65 nm for SpaceFibre Applications

Radiation-Tolerant Digitally Controlled Ring Oscillator in 65-nm CMOS

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