Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Cardoso, Adilson S.; Chakraborty, Partha Sarathi; Karaulac, Nedeljko; Fleischhauer, David M.; Lourenco, Nelson E.; Fleetwood, Zachary E.; Omprakash, Anup P.; England, Troy; Jung, Seungmin; Najafizadeh, Laleh; Roche, N.; Khachatrian, Ani; Warner, Jeffrey H.; McMorrow, D.; Büchner, S.; Zhang, En Xia; Zhang, Cher Xuan; McCurdy, Michael W.; Reed, Robert A.; Fleetwood, D.M.; Paki-Amouzou, Pauline; Cressler, John D.

doi:10.1109/tns.2014.2358078

Cited by 27 publications

(9 citation statements)

References 20 publications

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“…Conley等人 [28] [29] 研究认为高k介电材料的重离子硬击穿电压高于超薄SiO 2 . Quinteros等人 [30] 和Singh等人 [31,32] 的实验 [37] 、三维FinFET器件 [38] 、U形沟道器件 [39] 、新型高k栅介质器件 [40] 、非硅沟道器件 [6] 寻找新型高迁移率沟道材料以提升CMOS性能是一个重要发展方向 [43,44] . GeSn具有很高的空穴迁移率, 是新型纳米器件最有潜力的沟道材料之一 [45] , [45,46] , 但对其辐射效应研究国内外尚属空白.…”

Section: 重离子辐照对纳米器件材料的电学特性有较大unclassified

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Chen¹,

Liu²,

Ma³

et al. 2018

Chin. Sci. Bull.

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Section: 重离子辐照对纳米器件材料的电学特性有较大unclassified

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Chen¹,

Liu²,

Ma³

et al. 2018

Chin. Sci. Bull.

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“…Beyond the existing performance requirements of commercial applications, space microelectronics are required to be robust to the increased radiation levels of the space environment [5,[18][19][20][21][22][23][24][25][26][27]. Hence, there is a lot of ongoing research activity to investigate the design of CMOS based analog, digital and mixed-signal, radiation tolerant circuits [28][29][30][31][32][33][34][35][36][37][38][39][40][41][42][43][44][45], including those that operate in the subthreshold regime [46][47][48].…”

Section: Introductionmentioning

confidence: 99%

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

et al. 2019

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The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ -rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 μm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.

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“…The related research on the single-event transient (SET) effects of the bandgap reference circuit were reported in [3][4][5][6][7]. The circuitlevel radiation-hardened-by-design (RHBD) techniques, such as the guard ring technique [3], the triode reverse connection [4], and the inverse-mode transistors [5], were adopted in SiGe BiCMOS technology. The suppression of SET pulses was also realized by pulse quenching [6] and DC signal isolation [7] in bulk CMOS process.…”

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confidence: 99%

A Single-event Transient Mitigation Technique for Bandgap Reference Utilizing in Space Application

Zhao

Liu

Liang

et al. 2023

Preprint

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This paper proposes a radiation-hardened-by-design (RHBD) technique targeting single-event transient (SET) mitigation in bandgap reference (BGR) circuits. The dual modular redundancy (DMR) technique used for BGR ensures correct output voltage to the subsequent circuits. The BGR output voltage is detected and clamped by two threshold voltages and time-delayed switches further isolate SET pulses. The proposed BGR circuit was fabricated in 28 nm bulk CMOS process. Laser experiments illustrate that SET perturbation is almost eliminated when laser energy is up to 1 nJ. The RHBD BGR is proven to be good substitute for space applications.

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Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Cited by 27 publications

References 20 publications

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Research progress of radiation effects mechanisms and experimental techniques in nano-devices

Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions

A Single-event Transient Mitigation Technique for Bandgap Reference Utilizing in Space Application

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