Single-event sensitivity of a single SRAM cell

Abstract

dimensional translation stage, allowing a O.lpm displacement Abstrod-A teSt vehicle has been specially realized to resolution. The beam is focused down to a spot size of lpm on the surface of the DUT. The spatial distribution of the laser beam energetic density is well-known: the lateral distribution profile is a gaussian. Thus, afler a deconvolution, the spatial resolution of the technique may be brought back to demonstrate that dinerent physical mechanisms are responsible for SEU phenomena within an elementary memaw Cell, depending on the impact location. Validation is Pedormed by means of pulsed laser equipment.

Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition

“…We also observed that if the input and the output signals of the transmission gate are different from each other in its OFF state, the pMOS transistor in the transmission gate contributes also to the flipping of the signal [6] and the spot gets wider covering all four pMOS transistors. We assume that this effect causes the difference between weak and strong spots.…”

“…Pulsed laser systems have been widely used for measuring the circuit sensitivity to SEU (single event upset) testing [4][5][6][7][8], validation of fault tolerant designs [9] and signal propagation imaging [10,11]. Moreover, the physics of the SEU phenomenon have been understood better developing models based on simulations [12,13].…”

Modulus fault attacks against RSA–CRT signatures

“…Therefore, this search step was a bit costly, taking a total of 11 minutes and 13 seconds. Additionally, due to the higher number of candidate moduli, the number of candidate CRT values v * i was also somewhat larger than in §3.1, namely: 7,17,3,9,15,5,14,44,44,17,10,55 for our 12 pairs respectively. Keeping only the 5 indices with the smallest number of candidates, we obtained 3 × 5 × 7 × 9 × 10 = 9450 possible CRT value vectors v * .…”

“…SRAM (Static Random Access Memory) laser exposure is known to cause bit-flips [28], [15], [2], [Can09], a phenomenon called Single Event Upset (SEU). By tuning the beam's energy level below a destructive threshold, the target will not suffer any permanent damage.…”

“…The charge carriers induced in the collection volume of the drain-substrate junction of the blocked transistor are collected and create a transient current that inverts logically the inverter's output voltage. This voltage inversion is in turn applied to the second inverter that switches to its opposite state: all in all, a bit flip happens [15], [2].…”