Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions

Blüthner, K.; Götz, Martín; Hädicke, A.; Krech, W.; Wagner, Th.; Mühlig, H.; Fuchs, H.‐J.; Hübner, Uwe; Schelle, D.; Kley, E.‐B.; Fritzsch, L.

doi:10.1109/77.621988

Cited by 11 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Other techniques have different drawbacks. The self-aligned in-line technique (SAIL) gives a high ∆ and low junction capacitances, but rather high junction resistances and thus low current gain [19]. A recently published modification [20] of the established three layer process using a prefabricated barrier in a sandwich structure gives a very good ∆, but it will have to be scaled down by about half an order of magnitude in linear dimensions before the charging energies reach those attainable by the Niemeyer-Dolan technique at present.…”

Section: Experimental Details 21 Sample Fabricationmentioning

confidence: 99%

Bias and temperature dependence of the noise in a single electron transistor

et al. 1999

View full text Add to dashboard Cite

PACS 73.23Hk Coulomb blockade; single-electron tunneling. PACS 73.40Rw Metal-insulator-metal structures. AbstractA single electron transistor based on Al-AlOx-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range (1. . . 300) Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i. e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.

show abstract

Section: Experimental Details 21 Sample Fabricationmentioning

confidence: 99%

Bias and temperature dependence of the noise in a single electron transistor

et al. 1999

View full text Add to dashboard Cite

show abstract

“…9 This is of great importance since previously, only native oxides of the metal electrodes (e.g., Al, Cr, Ti, and Ni) formed the tunnel barrier in metal-based SETs. [10][11][12][13][14] Moreover, the use of ALD enables formation of low-k SiO 2 dielectric on metal substrates. Figure 1 shows the schematic of the fabrication steps in MIM nanodamascene SETs.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Karbasian

Orlov

Snider

2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition. Chemical mechanical polishing provides a path for tuning the dimensions of tunnel junctions by adjusting the polish time, surpassing the limits imposed by electron beam lithography and lift-off, while atomic layer deposition provides precise control over the thickness of the tunnel barrier and significantly increases the choices for barrier materials.

show abstract

“…So far a number of attempts have been made to fabricate Nb-based mesoscopic junctions (Δ Nb (bulk) ≃1.5 meV) as an alternative to Al junctions [2,3,[5][6][7][8][9][10][11][12][13]. However, since the melting point of Nb is high, it is believed that the polymer resist is easily damaged by heat during the deposition process, causing the quality of the deposited Nb film to degrade [14].…”

Section: Introductionmentioning

confidence: 99%

Characterization of superconducting single-electron transistors with small Al/AlO$_{x}$/V Josephson junctions

Shimada¹,

Miyawaki²,

Hagiwara³

et al. 2014

Supercond. Sci. Technol.

View full text Add to dashboard Cite

Superconducting single-electron transistors (SSETs) composed of small Al/AlOx/V junctions were fabricated, and their transport properties were investigated. The device with an Al island exhibited a supercurrent that was 2e-periodic in the gate charge while that with a V island showed a periodicity of e, where e is an elementary charge. The Josephson-quasiparticle (JQP)cycle current appeared at the bias voltage V in the range Δ Δ

show abstract

Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions

Cited by 11 publications

References 9 publications

Bias and temperature dependence of the noise in a single electron transistor

Bias and temperature dependence of the noise in a single electron transistor

Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Characterization of superconducting single-electron transistors with small Al/AlO$_{x}$/V Josephson junctions

Contact Info

Product

Resources

About