Single-Electron Transistor with Ultra-High Coulomb Energy of 5000 K Using Position Controlled Grown Carbon Nanotube as Channel

Abstract

On the condition of electric-LO phonon strong coupling in a parabolic quantum dot, we obtain the eigenenergy and the eigenfunctions of the ground state and the first-excited state using the variational method of Pekar type. This system in a quantum dot may be employed as a two-level quantum system-qubit. When the electron is in the superposition state of the ground state and the first-excited state, we obtain the time evolution of the electron density. The relations of the probability density of electron on the temperature and the electron-LO-phonon coupling constant and the relations of the period of oscillation on the temperature, the electron-LO-phonon coupling constant, the Coulomb binding parameter and the confinement length are derived. The results show that the probability density of electron oscillates with a period when the electron is in the superposition state of the ground and the first-excited state, and show that there are different laws that the probability density of electron and the period of oscillation change with the temperature and the electron-LO-phonon coupling constant when the temperature is lower or higher. And it is obtained that the period of oscillation decreases with increasing the Coulomb bound potential and increases with increasing the confinement length not only at lower temperatures but also at higher temperatures.

Low-Energy Irradiation Damage in Single-Walled Carbon Nanotubes

“…After the irradiation, ambipolar semiconducting gate characteristics were clearly observed. Room-temperature Coulomb oscillations have been observed when defects form a small dot in a SWCNT channel (Matsumoto et al, 2003). The low-energy irradiation damage can also be used to fabricate such small dots intentionally.…”

Origin of the Electric Property Change of a Single-Wall Carbon Nanotube Caused by Low-Energy Irradiation: Defects or Substrate Charging?

“…Normally-on semiconducting properties have been observed for metallic SWNTs slightly damaged by Ar plasma treatment [15]. The latter may be due to the formation of a tiny dot caused by defects in the SWNT channel [16]. Anyway, forward and reverse sweeps are almost consistent with each other for suspended SWNTs.…”

Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators

“…[14][15][16][17][18] As defect-introducing CNT-FETs have smaller quantum dots in the channel, they often showed SET behaviors at room temperature. Although they showed SET characteristics at room temperature, the fabrication process was complex and reproducibility was not good.…”