Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard

Nakamura, Shuji; Pashkin, Yu. A.; Tsai, Jaw-Shen; Kaneko, Nobu‐Hisa

doi:10.1109/tim.2015.2418452

Cited by 16 publications

(11 citation statements)

References 15 publications

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“…Single electron devices (SEDs) have many important applications due to their ability to localize and manipulate individual electrons' degrees of freedom. SEDs have been proposed as current standards in electrical metrology, [1][2][3][4][5][6][7][8][9] and as memory and logical devices in integrated circuits. [10][11][12][13][14] They have also been studied as qubits, when there are only a few electrons on the quantum dot.…”

Section: Introductionmentioning

confidence: 99%

Effect of device design on charge offset drift in Si/SiO2 single electron devices

Ochoa

Sanchez

et al. 2018

Journal of Applied Physics

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We have measured the low-frequency time instability known as charge offset drift of Si/SiO2 single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance Cm between defects and the quantum dot, and increase in the total defect capacitance Cd due to the top gate. These results depart from the prominent interpretation that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in developing SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.

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Section: Introductionmentioning

confidence: 99%

Effect of device design on charge offset drift in Si/SiO2 single electron devices

Ochoa

Sanchez

et al. 2018

Journal of Applied Physics

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“…This ability to manipulate individual electrons leads to several applications. Metrologists have pursued electron-counting standards for capacitance [1,2] and current [3][4][5][6][7][8][9][10] since the realization of SEDs. Others have worked to perform logic or memory applications with SEDs because of the prospect for doing so at very low power [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Stability of Single Electron Devices: Charge Offset Drift

Stewart

Zimmerman

2016

Applied Sciences

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Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information. Success in each application ultimately requires exceptional performance, uniformity, and stability from SEDs which is currently unavailable. In this review, we discuss a time instability of SEDs that occurs at low frequency ( 1 Hz) called charge offset drift. We review experimental work which shows that charge offset drift is large in metal-based SEDs and absent in Si-SiO 2 -based devices. We discuss the experimental results in the context of glassy relaxation as well as prospects of SED device applications.

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“…A demonstrated result of single‐electron transfer by the NMIJ/AIST with the device is shown in Fig. . The system that has been used for the NMIJ/AIST single‐electron project is shown in Fig.…”

Section: Set Effect and Current Standardsmentioning

confidence: 99%

“…Schematic of a superconductor/insulator/normal metal/insulator/superconductor (SINIS) turnstile electron pump: (a) An electron is introduced from the superconducting source electrode to the metallic island, (b) the electron is trapped in the island, and (c) the electron is transferred to the superconducting drain electrode Quantized current generated by a SINIS turnstile electron pump device[52] …”

mentioning

confidence: 99%

Review of quantum electrical standards and benefits and effects of the implementation of the ‘revised SI’

Kaneko

2017

IEEJ Transactions Elec Engng

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In the present International System of Units (SI), the Josephson effect and quantum Hall effect have been utilized for voltage and resistance primary standards, and the electrical current standard has been derived from a combination of the two quantum standards. In 2018, it is planned that the SI will be revised based on the latest measurements results of the Planck constant, elementary charge, Avogadro constant, and Boltzmann constant. The adoption of the 'Revised SI' means we shall finally terminate the traceability of the kilogram tied to an artifact (the international prototype of the kilogram) and start a new traceability of the kilogram to the Planck constant h. In electricity and magnetism metrology, and related precision measurements, the traceability presently based on the 'conventional values' of the Josephson constant and the von Klitzing constant is going to be switched to the revised traceability based on the Planck constant and elementary charge. In this article, the foundation of the quantum electrical measurements and how the Revised SI, which is based purely on fundamental physical constants and quantum effects, will bring us a long-term benefit with negligible impact to industry are detailed.

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Single-Electron Pumping by Parallel SINIS Turnstiles for Quantum Current Standard

Cited by 16 publications

References 15 publications

Effect of device design on charge offset drift in Si/SiO2 single electron devices

Effect of device design on charge offset drift in Si/SiO2 single electron devices

Stability of Single Electron Devices: Charge Offset Drift

Review of quantum electrical standards and benefits and effects of the implementation of the ‘revised SI’

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