Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

Ibukuro, Kouta; Husain, Muhammad; Zuo, Liang; Hillier, Joseph; Liu, Fayong; Tomita, Isao; Tsuchiya, Yoshishige; Rutt, H.N.; Saito, Shinichi

doi:10.3389/fphy.2019.00152

Cited by 7 publications

(4 citation statements)

References 59 publications

(104 reference statements)

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“…Unlike in all metal/insulator/metal devices previously studied, if the bias is held constant a cyclical filament formation and disruption at random times occurs (see Figure 5b). More importantly, the mean on/off current ratio statistically observed in Figure 5b is >100, which is the highest ever reported in the literature for a random signal of telegraphic characteristics when compared not only to other reports on h‐BN [ 12,37,47,54 ] but also TMOs, [ 11,52,55,67–72 ] ultra‐scaled transistors [ 73–78 ] and nanowires [ 79–87 ] (see Figure 5c). This behavior, which remains stable over time, cannot be strictly called RTN because this term has been always employed in the literature to refer to charge trapping and de‐trapping, while here it is related to ionic movement; hence, we propose to call it random telegraph signal (RTS)‐like current.…”

Section: Resultssupporting

confidence: 50%

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Pazos

Becker

Villena

et al. 2023

Adv Funct Materials

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Memristor‐based electronic memory have recently started commercialization, although its market size is small (~0.5%). Multiple studies claim their potential for hardware implementation of artificial neural networks, advanced data encryption, and high‐frequency switches for 5G/6G communication. Application aside, the performance and reliability of memristors need to be improved to increase their market size and fit technology standards. Multiple groups propose novel nano‐materials beyond phase‐change, metal‐oxides, and magnetic materials as resistive switching medium (e.g., two‐dimensional, nanowires, perovskites). However, most studies use characterization setups that are blind to critical phenomena in understanding charge transport across the devices. Here an advanced setup with high temporal resolution is used to analyze current noise, dielectric breakdown growth, and ambipolar resistive switching in memristors based on multilayer hexagonal boron nitride (h‐BN), one of the most promising novel nano‐materials for memristive applications. The random telegraph noise in pristine memristors and its evolution as the devices degrade, covering ~7 orders of magnitude in current with consistent observation, is studied. Additionally, an ambipolar switching regime with very low resistance down to 50Ω and its connection with a telegraph behavior with high/low current ratios >100, linked to a thermally‐driven disruption of a metallic nanofilament, is shown.

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Section: Resultssupporting

confidence: 50%

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Pazos

Becker

Villena

et al. 2023

Adv Funct Materials

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“…By applying Green's non-equilibrium function approach [5][6][7], the CBPD for a lowconductance SET was calculated [4] and referred to as a weak coupling regime [8][9][10]. Utilizing the proposed method, one can determine the optimum temperature to operate a low-conductance SET for various applications, such as single-electron memory [11][12][13] and quantum dots [14], which trap and manipulate individual electrons, allowing researchers to explore quantum phenomena. Meanwhile, a high-conductance SET, i.e.…”

Section: Introductionmentioning

confidence: 99%

Calculating the Coulomb blockade phase diagram in the strong coupling regime of a single-electron transistor: a quantum Monte Carlo study

Harata,

Hongthong,

Srivilai

2024

J. Stat. Mech.

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We present a novel approach for calculating the Coulomb blockade phase diagram (CBPD) in the experimentally accessible strong coupling regime of a single-electron transistor. Our method utilizes the path integral Monte Carlo technique to accurately compute the Coulomb oscillation of the differential capacitance (DC). Furthermore, we investigate the impact of the gate voltage and temperature variations on the DC, thereby gaining insights into the system’s behavior. As a result, we propose a method to calculate the Coulomb blockade boundary line and demonstrate its efficacy by setting the visibility parameter to 10%. The resulting boundary line effectively defines the transition between the Coulomb and non-Coulomb blockade regimes, thereby enabling the construction of a comprehensive CBPD.

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“…[ 29,31 ] For instance, it has been demonstrated that a single electron captured in a single‐trap state responsible for an RTS behaves quantum mechanically, and such a trap can thus be considered a promising candidate for use in quantum information computing. [ 32,33 ] Moreover, an important role of single traps has been shown for digital processing systems and memory devices. [ 34 ] These opportunities offered by an electrically active single trap in nanoscale devices attract the increasing interest of the scientific community.…”

Section: Introductionmentioning

confidence: 99%

Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena

Kutovyi

Piatnytsia

Boichuk

et al. 2021

Adv Elect Materials

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In small‐area transistors, the trapping/detrapping of charge carriers to/from a single trap located in the gate oxide near the Si/SiO2 interface leads to the discrete switching of the transistor drain current, known as single‐trap phenomena (STP), resulting in random telegraph signals. Utilizing the STP‐approach, liquid‐gated (LG) nanowire (NW) field‐effect transistor biosensors have recently been proposed for ultimate biosensing with enhanced sensitivity. In this study, the impact of channel doping concentration on the capture process of charge carriers by a single trap in LG silicon NW structures is investigated. A significant effect of the channel doping concentration on the single‐trap dynamic is revealed. To understand the mechanism behind unusual capture time behavior compared to that predicted by the classical Shockley–Read–Hall theory, an analytical model based on the rigorous description of the additional energy barrier that charge carriers have to overcome to be captured by the trap at different gate voltages is developed. The enhancement of the sensitivity for single‐trap phenomena biosensing with an increase of the channel doping concentration is explained within the framework of the proposed analytical model. The results open prospects for the development of advanced single trap‐based devices.

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Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

Cited by 7 publications

References 59 publications

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

Calculating the Coulomb blockade phase diagram in the strong coupling regime of a single-electron transistor: a quantum Monte Carlo study

Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena

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