Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Fissel, A.; Dargis, Rytis; Bugiel, E.; Schwendt, Dominik; Wietler, Tobias; Krügener, Jan; Laha, Apurba; Osten, H. J.

doi:10.1016/j.tsf.2009.09.139

Cited by 23 publications

(10 citation statements)

References 11 publications

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“…9 In this context, REOs not only demonstrate diverse functions beyond conventional semiconductor functionality such as the use as diluted magnetic semiconductors. 10 They can also be used as buffers for the integration of other functional layers such as superconductive, 11 ferromagnetic 12 and multiferroic 13 oxides as well as semiconductors like Si, 14 Ge 15 and III-V 16 grown on Si.…”

Section: Introductionmentioning

confidence: 99%

Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems

Niu

Zoellner

Schroeder

et al. 2015

Phys. Chem. Chem. Phys.

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Rare earth praseodymium and cerium oxides have attracted intense research interest in the last few decades, due to their intriguing chemical and physical characteristics. An understanding of the correlation between structure and properties, in particular the surface chemistry, is urgently required for their application in microelectronics, catalysis, optics and other fields. Such an understanding is, however, hampered by the complexity of rare earth oxide materials and experimental methods for their characterisation. Here, we report recent progress in studying high-quality, single crystalline, praseodymium and cerium oxide films as well as ternary alloys grown on Si(111) substrates. Using these well-defined systems and based on a systematic multi-technique surface science approach, the corresponding physical and chemical properties, such as the surface structure, the surface morphology, the bulk-surface interaction and the oxygen storage/release capability, are explored in detail. We show that specifically the crystalline structure and the oxygen stoichiometry of the oxide thin films can be well controlled by the film preparation method. This work leads to a comprehensive understanding of the properties of rare earth oxides and highlights the applications of these versatile materials. Furthermore, methanol adsorption studies are performed on binary and ternary rare earth oxide thin films, demonstrating the feasibility of employing such systems for model catalytic studies. Specifically for ceria systems, we find considerable stability against normal environmental conditions so that they can be considered as a "materials bridge" between surface science models and real catalysts.

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Section: Introductionmentioning

confidence: 99%

Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems

Niu

Zoellner

Schroeder

et al. 2015

Phys. Chem. Chem. Phys.

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“…5,6 Extensive studies have been conducted and high quality epitaxial growth of Gd 2 O 3 (111) on Si(111) has been reported together with the method of growing a double-barrier quantum structure by Osten's and Fissel's group. 7,8 They also reported an epitaxial growth of (110)-oriented Gd 2 O 3 on Si(100). A sub-nanometer capacitance equivalent oxide thickness has been obtained with this structure.…”

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confidence: 95%

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Sitaputra

Tsu

2012

Applied Physics Letters

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“…This leads to three-dimensional Volmer-Weber growth mode as can be noted from RHEED pattern of the germanium just after the start of growth [ Fig. 30 Consequently, the same reasons determine A/B stacking sequence in case of silicon or germanium growth on the metal oxide as was denoted by Fissel et al 31 The energetically preferred single A-oriented Ge islands should be formed on rare-earth metal oxide at lower temperatures-for example, by crystallization from amorphous phase during surfactant mediated solid phase epitaxy of Ge on lanthanum yttrium oxide as was shown by Bojarczuk et al 7 In work of Giussani et al, 18 it was demonstrated epitaxy of a single crystal germanium layer on praseodymium oxide buffer at optimized process conditions. The double spots in the pattern indicate formation of twinned germanium islands that also takes place during silicon epitaxy on gadolinium oxide.…”

Section: Resultsmentioning

confidence: 81%

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

Dargis¹,

Arkun²,

Clark³

et al. 2011

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Ternary and binary rare-earth oxides that are used as a template buffer, which accommodates the crystal lattice mismatch between substrate and a semiconductor layer, are discussed here. The oxides were grown on Si(111) substrates and exhibit the cubic bixbyite crystal structure. Stabilization of the cubic bixbyite structure of ternary erbium-neodymium oxide and lanthanum oxide was analyzed using structural investigation of the epitaxially grown oxides and ab initio density functional theory calculations. The authors demonstrate that despite the more energetically favorable hexagonal structure of bulk lanthanum oxide a pseudomorphic single crystal cubic lanthanum oxide layer grows under nonequilibrium conditions of a molecular beam epitaxy process on gadolinium oxide. Growth of hexagonal lanthanum oxide begins when the critical thickness of the layer is reached. Germanium was epitaxially grown on the cubic bixbyite lanthanum sesquioxide. Due to a higher surface energy, germanium starts to grow in the form of twinned islands on the oxide layer that later merge, forming a closed layer. X ray diffraction reveals mostly single crystal structure of the germanium layer with stacking twins located only at the interface with the lanthanum oxide layer.

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Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Cited by 23 publications

References 11 publications

Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems

Controlling the physics and chemistry of binary and ternary praseodymium and cerium oxide systems

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Rare-earth-metal oxide buffer for epitaxial growth of single crystal GeSi and Ge on Si(111)

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