Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Sitaputra, Wattaka; Tsu, Raphael

doi:10.1063/1.4768295

Cited by 9 publications

(9 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Oxide films grown under these conditions were found to contain silicides. By contrast, in the presence of additional oxygen, smooth, silicide-free rare-earth oxide films were grown for La 2 O 3 , Lu 2 O 3 , and (as already demonstrated in refs and ) Gd 2 O 3 . Figure summarizes our experimental results.…”

Section: Results and Discussionsupporting

confidence: 54%

“…The presence of a rare-earth metal vapor in this case might already explain the observed silicide formation. The nonstoichiometric vaporization with oxygen loss, schematically shown in Figure c, has been recently described in ref . During (electron-beam) sublimation of fresh Gd 2 O 3 source material, silicide-free Gd 2 O 3 layers were grown on Si(001) even without additional oxygen.…”

Section: Introductionmentioning

confidence: 99%

“…Experiments showed, however, that MBE growth without additional oxygen even from oxide sources of Nd 2 O 3 , Pr 2 O 3 , , and Gd 2 O 3 , can lead to the formation of interface silicide. This silicide formation has been attributed to its energetic preference over a stable Si-rare-earth-oxide interface at low oxygen chemical potential − or to the interdiffusion of Gd and Si at the interface of oxygen-deficient Gd 2 O 3 layers and Si .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Bierwagen

Proessdorf

Niehle

et al. 2013

Crystal Growth & Design

View full text Add to dashboard Cite

The fundamental issue of oxygen stoichiometry in oxide thin film growth by subliming the source oxide is investigated by varying the additionally supplied oxygen during molecular beam epitaxy of RE2O3 (RE = Gd, La, Lu) thin films on Si(111). Supplying additional oxygen throughout the entire growth was found to prevent the formation of rare earth silicides observed in films grown without an oxygen source. Postgrowth vacuum annealing of oxygen stoichiometric films did not lead to silicide formation thereby confirming that the silicides do not form as a result of an interface instability at growth temperature in vacuum but rather due to an oxygen deficiency in the source vapor. The average oxygen deficiency of the rare-earth containing species in the source vapor was quantified by the 18O tracer technique and correlated with that of the source material, which gradually decomposed during sublimation. Therefore, any oxide growth by sublimation of the oxide source material requires additional oxygen to realize oxygen stoichiometric films.

show abstract

Section: Results and Discussionsupporting

confidence: 54%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Bierwagen

Proessdorf

Niehle

et al. 2013

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…Single crystal rare earth (RE) oxides have been epitaxially grown on GaAs [1,2,3], Si [4,5,6,7], and GaN [8,9] using ultra-high vacuum (UHV) e-beam evaporation in a growth mode of molecular beam epitaxy (MBE) and atomic layer deposition (ALD). Among various high κ dielectrics in amorphous and single-crystal forms to passivate GaAs(001), MBE-grown Gd 2 O 3 -based RE-oxides have given low interfacial trap densities ( D it ) [10], thermal stability at high temperatures [11], and the first demonstration of inversion-channel enhancement-mode GaAs metal-oxide-semiconductor field-effect-transistor (MOSFET) [12,13].…”

Section: Introductionmentioning

confidence: 99%

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

et al. 2015

View full text Add to dashboard Cite

Single-crystal atomic-layer-deposited (ALD) Y2O3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 × 6 and GaAs(111)A-2 × 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD multi-chamber system. More detailed studies on the crystallography of the hetero-structures were carried out using high-resolution synchrotron radiation X-ray diffraction. When deposited on GaAs(001), the Y2O3 films are of a cubic phase and have (110) as the film normal, with the orientation relationship being determined: Y2O3(110)[001][true1¯10]//GaAs(001)[110][1true1¯0]. On GaAs(111)A, the Y2O3 films are also of a cubic phase with (111) as the film normal, having the orientation relationship of Y2O3(111)[2true1¯true1¯][01true1¯]//GaAs(111)[true2¯11][0true1¯1]. The relevant orientation for the present/future integrated circuit platform is (001). The ALD-Y2O3/GaAs(001)-4 × 6 has shown excellent electrical properties. These include small frequency dispersion in the capacitance-voltage (CV) curves at accumulation of ~7% and ~14% for the respective p- and n-type samples with the measured frequencies of 1 MHz to 100 Hz. The interfacial trap density (Dit) is low of ~1012 cm−2eV−1 as extracted from measured quasi-static CVs. The frequency dispersion at accumulation and the Dit are the lowest ever achieved among all the ALD-oxides on GaAs(001).

show abstract

“…The former led to the development of the blue light-emitting diode and lasers, whilst the latter led to the discovery of long-range anti-ferromagnetic coupling through non-magnetic media [3,4], which subsequently led to the observation of a giant magnetoresistance (GMR) [5] for high-density magnetic recording. It is a challenge to perfect hetero-epitaxy, particularly when overlayers and substrates exhibit vastly different chemical bonding, e.g., metals on insulators, metals on semiconductors, insulators on semiconductors, vice versa, and many others [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

et al. 2020

View full text Add to dashboard Cite

The role of an atomic-layer thick periodic Y–O array in inducing the epitaxial growth of single-crystal hexagonal YAlO3 perovskite (H-YAP) films was studied using high-angle annular dark-field and annular bright-field scanning transmission electron microscopy in conjunction with a spherical aberration-corrected probe and in situ reflection high-energy electron diffraction. We observed the Y–O array at the interface of amorphous atomic layer deposition (ALD) sub-nano-laminated (snl) Al2O3/Y2O3 multilayers and GaAs(111)A, with the first film deposition being three cycles of ALD-Y2O3. This thin array was a seed layer for growing the H-YAP from the ALD snl multilayers with 900 °C rapid thermal annealing (RTA). The annealed film only contained H-YAP with an excellent crystallinity and an atomically sharp interface with the substrate. The initial Y–O array became the bottom layer of H-YAP, bonding with Ga, the top layer of GaAs. Using a similar ALD snl multilayer, but with the first film deposition of three ALD-Al2O3 cycles, there was no observation of a periodic atomic array at the interface. RTA of the sample to 900 °C resulted in a non-uniform film, mixing amorphous regions and island-like H-YAP domains. The results indicate that the epitaxial H-YAP was induced from the atomic-layer thick periodic Y–O array, rather than from GaAs(111)A.

show abstract

Defect induced mobility enhancement: Gadolinium oxide (100) on Si(100)

Abstract: Articles you may be interested inBiaxially strained extremely-thin body In0.53Ga0.47As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrate and physical understanding on their electron mobility

Cited by 9 publications

References 25 publications

Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Oxygen-Deficient Oxide Growth by Subliming the Oxide Source Material: The Cause of Silicide Formation in Rare Earth Oxides on Silicon

Single-Crystal Y2O3 Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition

Epitaxy from a Periodic Y–O Monolayer: Growth of Single-Crystal Hexagonal YAlO3 Perovskite

Contact Info

Product

Resources

About