Single crystalline CdTe solar cells grown by MOCVD

Hot carrier relaxation in CdTe via phonon–plasmon modes

“…We believe, therefore, that the peak at 4 THz is due to the lower branch LOPC mode (i.e. L − mode) whereas the peak at 3.3 THz can be attributed to the A1 mode of Tellurium 14 . Following the laser excitation, when the carrier density is high (i.e.…”

“…CdTe is a polar semiconductor with an intermediate electron-phonon coupling strength that is quantified by the polaron coupling constant 0.4 α , defined in terms of the static and high-frequency di electric constants [13]. Although CdTe is an important material with a wide range of applications such as solar cells, infrared, x-ray and γ-ray detectors [14][15][16], experimental work on its ultrafast dynamics is scarce [13,[17][18][19], especially if one compares it with the very well studied, weakly-coupled ( 0.06 α ) polar semiconductor GaAs. In [17], Ishioka et al reported the time-resolved reflectivity on bulk CdTe in a photoexcitation fluence regime of 4.4 to 88 μ J cm −2 .…”

Enhancement of Solar Cell Performance of Electrodeposited Ti/n-Cu2O/p-Cu2O/Au Homojunction Solar Cells by Interface and Surface Modification

“…Since the homojunction should not present any interfacial deformation resulting from the lattice mismatch between p-type and n-type materials, the separation of photoinduced charges in the Cu 2 O homojunction can be considerably improved, hence improving the photoelectric conversion performance [7]. Another advantage of the homojunction structure is that it will have a higher stability in thermal cycles and higher resistance to cosmic radiation [8]. Consequently, homojunctions lead to better performance compared to heterojunctions in their applications.…”

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

“…[1][2][3] The exceptional properties of CdTe, such as high absorption coefficient and a high energy radiation resistance, make it an excellent candidate for solar cells. [4][5][6] A film thickness of 1 mm is sufficient to absorb y99% of the solar spectrum photon flux with energy higher than the band gap of CdTe (1.5 eV). 4 The strong room-temperature infrared luminescence property of mercury telluride (HgTe) makes it a potential candidate for light-emitting devices.…”

“…[4][5][6] A film thickness of 1 mm is sufficient to absorb y99% of the solar spectrum photon flux with energy higher than the band gap of CdTe (1.5 eV). 4 The strong room-temperature infrared luminescence property of mercury telluride (HgTe) makes it a potential candidate for light-emitting devices. 7 A number of techniques are available for the deposition of CdTe thin films.…”