Single-crystal diamond MIS diode for deep UV detection

Alfieri, Domenico; Almaviva, S.; Sio, A. De; Donato, M. G.; Faggio, G.; Giannini, A; Messina, G.; Morgante, S.; Pace, E.; Santangelo, S.; Scuderi, S.; Tripodi, P.

doi:10.1080/10420151003729870

Cited by 5 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…diamond-based DUV Schottky photodiodes. Metal-insulatorsemiconductor (MIS) DUV photodiodes with the architecture of Al/intrinsic diamond/p-doped diamond have been exhibited excellent rectifying behavior with dark current at ≈10 −14 A at a bias of −70 V. [270] A photovoltaic current at zero bias was observed, implying the capability to function as self-driven DUVPDs.…”

Section: Heterojunction and Schottky Photodiodesmentioning

confidence: 99%

“…Note that both electrical and optoelectrical properties of these devices can keep unaffected when prolonging the annealing duration at high temperature, signifying promising potential of metal carbide and nitride contacts for developing thermally stable diamond‐based DUV Schottky photodiodes. Metal–insulator–semiconductor (MIS) DUV photodiodes with the architecture of Al/intrinsic diamond/p‐doped diamond have been exhibited excellent rectifying behavior with dark current at ≈10 −14 A at a bias of −70 V . A photovoltaic current at zero bias was observed, implying the capability to function as self‐driven DUVPDs.…”

Section: Diamondmentioning

confidence: 99%

See 1 more Smart Citation

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Xie

Tong

et al. 2019

Adv Funct Materials

366

261

View full text Add to dashboard Cite

Due to its significant applications in many relevant fields, light detection in the solar-blind deep-ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high-quality ultrawide-bandgap (UWBG) semiconductors have enabled the realization of various high-performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar-blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga 2 O 3 , Mg x Zn 1−x O, III-nitride compounds (Al x Ga 1−x N/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.with energy much higher than the semiconductor bandgap. Moreover, due to light absorption by the surface passivation layers, typically Si oxide, quantum efficiency in the DUV range is greatly reduced. The passivation layers are also easily degraded by UV illumination. Finally, for highly sensitive UV photodetection, the detectors need to be cooled to reduce dark current; the cooled detectors, however, behave like cold traps for contaminants which degrade the detectivity.In the past two decades, the emergence of UV photodetectors based on wide-bandgap (WBG) semiconductors has opened up an avenue to circumvent the above-mentioned dilemma. The WBG semiconductors such as SiC, GaN, and some group II-V compounds, typically have bandgaps exceeding ≈3.10 eV, enabling room-temperature detectors to possess fast response speed, and offering intrinsic visible-blindness (response cutoff wavelength: ≈400 nm). [14][15][16] Moreover, these semiconductors generally possess significantly higher thermal conductivity than Si, which renders them suitable for operation in harsh environments (e.g., high temperature and high power). The electron velocity of these materials at large electric fields is generally higher than that of common semiconductors, although WBG semiconductors exhibit relatively lower electron and hole mobilities. Compared with the abovementioned conventional WBG semiconductors, ultrawide-bandgap (UWBG) semiconductors, as the next generation of semiconductor materials with bandgaps significantly wider than the 3.4 eV of GaN, are particularly suitable for solar-blind DUV light detection. [17][18][19][20]

show abstract

Section: Heterojunction and Schottky Photodiodesmentioning

confidence: 99%

Section: Diamondmentioning

confidence: 99%