Single Atomic Layer Ferroelectric on Silicon

Fernandez‐Peña, Stéphanie; Kornblum, Lior; Jia, Yaqi; Kumah, Divine P.; Reiner, J. W.; Krivokapić, Zoran; Kolpak, Alexie M.; Ismail‐Beigi, Sohrab; Ahn, Charles; Walker, Frederick J.

doi:10.1021/acs.nanolett.7b03988

Cited by 27 publications

(29 citation statements)

References 52 publications

(73 reference statements)

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“…However, bonding at the (100) surface also presents an opportunity. Dogan et al predicted that a single monolayer (ML) of ZrO 2 on the Si(100) surface exhibits bi‐stable polarization states, thereby providing the same functionality as a conventional ferroelectric . The polarization emerges from rumpling of the ZrO 2 planes, which are normally unswitchable in bulk specimens.…”

Section: Materials and Functional Propertiesmentioning

confidence: 93%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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Functional oxides are an untapped resource for futuristic devices and functionalities. These functionalities can range from high temperature superconductivity to multiferroicity and novel catalytic schemes. The most prominent route for transforming these ideas from a single device in the lab to practical technologies is by integration with semiconductors. Moreover, coupling oxides with semiconductors can herald new and unexpected functionalities that exist in neither of the individual materials. Therefore, oxide epitaxy on semiconductors provides a materials platform for novel device technologies. As oxides and semiconductors exhibit properties that are complementary to one another, epitaxial heterostructures comprised of the two are uniquely poised to deliver rich functionalities. This review discusses recent advancements in the growth of epitaxial oxides on semiconductors, and the electronic and physical structure of their interfaces. Leaning on these fundamentals and practicalities, the material behavior and functionality of semiconductor-oxide heterostructures is discussed, and their potential as device building blocks is highlighted. The culmination of this discussion is a review of recent advances in the development of prototype devices based on semiconductor-oxide heterostructures, in areas ranging from silicon photonics to photocatalysis. This overview is intended to stimulate ideas for new concepts of functional devices and lay the groundwork for their realization.

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Section: Materials and Functional Propertiesmentioning

confidence: 93%

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Kumah

Ngai

Kornblum

2019

Adv Funct Materials

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“…379,[400][401][402] A related ferroelectric that has been recently discovered is monolayer ZrO 2 grown on silicon. 403,404 One of the stable crystal structures of ZrO 2 is the fluorite structure, in which an individual atomic ZrO 2 plane in the material is polar. In the bulk, this polarization is not switchable, but a combination of first principles calculations and experiment shows that a single ZrO 2 plane grown atomically abruptly on silicon has two stable structures with different polarizations.…”

Section: Hfomentioning

confidence: 99%

“…The ferroelectric structure then consists of a continuous monolayer of ZrO 2 that forms on silicon when grown using molecular beam epitaxy on an atomically clean Si(001) surface. When the polarization is switched by application of an electric field, the atomic configuration switches and shifts the silicon surface potential by 0.6 V. 404 Capacitance-voltage measurements of the gate stack show a large hysteresis with a direction that follows the ferroelectric switching of the ZrO 2 monolayer. This new class of materials consisting of a single atomic monolayer thick represents the lower limit of device scaling.…”

Section: Hfomentioning

confidence: 99%

Epitaxial ferroelectric interfacial devices

Vaz

Bibès

Rabe

et al. 2021

Applied Physics Reviews

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Epitaxial ferroelectric interfacial devicesFerroelectric interfacial devices consist of materials systems whose interfacial electronic properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are modulated by a ferroelectric layer set in its immediate vicinity. While the prototypical example of such a system is the ferroelectric field effect transistor first proposed in the 1950s, only with the recent advances in the controlled growth of epitaxial thin films and heterostructures, and the recent physical understanding down to the atomic scale of screening processes at ferroelectric-semiconducting and -metallic interfaces made possible by first principles calculations, have the conditions been met for a full development of the field. In this review, we discuss the recent advances in ferroelectric interfacial systems, with emphasis on the ferroelectric control of the electronic properties of interfacial devices with well ordered (epitaxial) interfaces. In particular, we consider the cases of ferroelectric interfacial systems aimed at controlling the correlated state, including superconductivity, Mott metallic-insulator transition, magnetism, charge, and orbital order, and charge and spin transport across ferroelectric tunnel junctions. The focus is on the basic physical mechanisms underlying the emergence of interfacial effects, the nature of the ferroelectric control of the electronic state, and the role of extreme electric field gradients at the interface in giving rise to new physical phenomena. Such understanding is key to the development of ferroelectric interfacial systems with characteristics suitable for next generation electronic devices based on controlling the correlated state of matter.

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“…The observation of ferroelectricity in the monolayer ZrO 2 on silicon marks the experimental attainment of the thinnest possible oxide ferroelectric [1,2]. In the previous section, we have shown that under-and over-oxygenated ZrO 2 may also exhibit switchable polarization.…”

Section: B Zro2 As a Buffer Between Srtio3 And Simentioning

confidence: 61%

“…In a recent letter, we reported on the ferroelectric behavior of atomically thin ZrO 2 grown on Si(001) [1]. This was achieved by atomic layer deposition (ALD) which produced an atomically abrupt interface and a mostly amorphous oxide.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric ZrO₂ Monolayers as Buffer Layers between SrTiO₃ and Si

Ismail‐Beigi¹

2019

J. Phys. Chem. C

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A monolayer of ZrO2 has recently been grown on the Si(001) surface and shown to have ferroelectric properties, which signifies the realization of the lowest possible thickness in ferroelectric oxides (M. Dogan et al., Nano Lett., 18 (1) (2018) [1]). In our previous computational study, we reported on the multiple (meta)stable configurations of ZrO2 monolayers on Si, and how switching between a pair of differently polarized configurations may explain the observed ferroelectric behavior of these films (M. Dogan and S. Ismail-Beigi, arXiv :1902.01022 (2019) [2]). In the current study, we conduct a DFT-based investigation of (i) the effect of oxygen content on the ionic polarization of the oxide, and (ii) the role of zirconia monolayers as buffer layers between silicon and a thicker oxide film that is normally paraelectric on silicon, e.g. SrTiO3. We find that (i) total energy-vs-polarization behavior of the monolayers, as well as interface chemistry, is highly dependent on the oxygen content; and (ii) SrTiO3/ZrO2/Si stacks exhibit multiple (meta)stable configurations and polarization profiles, i.e. zirconia monolayers can induce ferroelectricity in oxides such as SrTiO3 when used as a buffer layer. This may enable a robust non-volatile device architecture where the thickness of the gate oxide (here strontium titanate) can be chosen according to the desired properties. Low-energy ZrO x configurationsFigure 1: Low-energy relaxed configurations of monolayers with O:Zr = 1.0. Energies are per 2×1 in-plane cell.

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Single Atomic Layer Ferroelectric on Silicon

Cited by 27 publications

References 52 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial ferroelectric interfacial devices

Ferroelectric ZrO₂ Monolayers as Buffer Layers between SrTiO₃ and Si

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Single Atomic Layer Ferroelectric on Silicon

Cited by 27 publications

References 52 publications

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices

Epitaxial ferroelectric interfacial devices

Ferroelectric ZrO2 Monolayers as Buffer Layers between SrTiO3 and Si

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Ferroelectric ZrO₂ Monolayers as Buffer Layers between SrTiO₃ and Si