Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Yu, Jun; Wang, Han; Zhuge, Fuwei; Chen, Zirui; Hu, Man; Xu, Xiang; He, Yuhui; Ma, Ying; Miao, Xiangshui; Zhai, Tianyou

doi:10.1038/s41467-023-41363-x

Cited by 10 publications

(11 citation statements)

References 44 publications

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“…[ 23,36,38,42,53,57,61,62,68,69,72,74–92 ] The orange dashed line in the picture indicates the IRDS requirements for NVM, [ 46 ] note that the ON/OFF ratio is not a strictly defined parameter but is generally considered as ≈10 2 . [ 93 ] The datapoints of the memristors based on 2D monolayer materials are highlighted by the pink background.…”

Section: Application Of 2d Monolayer Materials In Vertical Resistive ...mentioning

confidence: 99%

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Li,

Chen,

Wang

et al. 2024

Advanced Materials

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The Si‐based integrated circuits industry has been developing for more than half a century, by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in‐memory computing and energy‐efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle‐to‐cycle and device‐to‐device uniformities hinder its mass production. Two‐dimensional (2D) materials, as a new type of semiconductor, have been successfully employed in various micro/nano electronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high‐frequency device performances, and in‐memory computing/neuromorphic computing applications. The scaling‐down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer‐2D‐material‐based resistive memory is expected to play a positive role in the exploration of beyond‐Si electronic technologies.This article is protected by copyright. All rights reserved

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Section: Application Of 2d Monolayer Materials In Vertical Resistive ...mentioning

confidence: 99%

Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Li,

Chen,

Wang

et al. 2024

Advanced Materials

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“…[23,29] Based on the measured float gate potential, we expect a high charge density ≈9.7 × 10 12 cm −2 induced in MoS 2 channel, which is almost an order higher than previous MoS 2 float gate transistors operated via control gate. [30] According to the capacitance coupling that ignores the capacitance of depleted semiconductor channel C s (Figure 2d), V FG is directly governed by the applied V DS and stored charge Q FG in float gate by the following relationship.…”

Section: Threshold Switching Memory In Two-terminal Float Gate Transi...mentioning

confidence: 99%

Adaptive Neural Activation and Neuromorphic Processing via Drain‐Injection Threshold‐Switching Float Gate Transistor Memory

Wang,

Lu,

Liu

et al. 2023

Advanced Materials

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Hetero‐modulated neural activation is vital for adaptive information processing and learning that occurs in brain. To implement brain‐inspired adaptive processing, previously various neuro‐transistors oriented for synaptic functions had been extensively explored, however, the emulation of nonlinear neural activation and hetero‐modulated behaviors had been not possible due to the lack of threshold switching behavior in a conventional transistor structure. Here, we report a two‐dimensional van der Waals (vdW) float gate transistor (FGT) that exhibits steep threshold switching behavior, and the emulation of hetero‐modulated neuron functions (integrate‐and‐fire, sigmoid type activation) for adaptive sensory processing. Unlike conventional FGTs, the threshold switching behavior stems from impact ionization in channel and the coupled charge injection to float gate. When a threshold is met, a sub‐30 mV/dec increase of transistor conductance by more than four orders is triggered with a typical switch time of ∼milliseconds. Essentially, by feeding light sensing signal as the modulation input, we demonstrate that two typical tasks that relies on adaptive neural activation, including collision avoidance and adaptive visual perception, can be realized. Our results may shed light on the emulation of rich hetero‐modulating behaviors in biological neurons and the realization of biomimetic neuromorphic processing at low hardware cost.This article is protected by copyright. All rights reserved

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“…1,2 Low-dimensional van der Waals (vdW) ferroelectric materials have advantages over their three-dimensional counterparts in terms of lower energy consumption and higher response speed, 3–11 providing a more promising platform for ferroelectric device applications. 12–15 In this regard, atomic thickness ferroelectric tunnel junctions (FTJs), 16–21 with the inherent advantage of device miniaturization, have been proposed.…”

Section: Introductionmentioning

confidence: 99%