Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio

Wang, Jiu-Long; Zhao, Yi-Feng; Xu, Wen; Zheng, Jun-Ding; Shao, Ya-Ping; Tong, Wen-Yi; Duan, Chun-Gang

doi:10.1039/d3mh02006a

Mater. Horiz.

2024

DOI: 10.1039/d3mh02006a

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Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio

Jiu-Long Wang,

Yi-Feng Zhao,

Wen Xu

et al.

Abstract: Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantages of device miniaturization.

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Nanotube ferroelectric tunnel junctions with an ultrahigh tunneling electroresistance ratio

Abstract: Low-dimensional ferroelectric tunnel junctions are appealing for the realization of nanoscale nonvolatile memory devices due to their inherent advantages of device miniaturization.

Cited by 0 publications

References 63 publications

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