Resistive Memory Devices at the Thinnest Limit: Progress and Challenges

Abstract

The Si‐based integrated circuits industry has been developing for more than half a century, by focusing on the scaling‐down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in‐memory computing and energy‐efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle‐to‐cycle and device‐to‐device uniformities hinder its mass production. Two‐dimensional (2D) materials, as a new type of semiconductor, have been successfully employed in various micro/nano electronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high‐frequency device performances, and in‐memory computing/neuromorphic computing applications. The scaling‐down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer‐2D‐material‐based resistive memory is expected to play a positive role in the exploration of beyond‐Si electronic technologies.This article is protected by copyright. All rights reserved

Two-dimensional carbon/boron nitrides: modification, machine learning and beyond

“…Its notable characteristics include high thermal conductivity, a wide bandgap, high surface area, controllable crystallinity, abundant porosity, high purity, and defects. 111–113 These features make h-BN highly promising for applications in adsorption, energy storage, and catalysis 25,114–117 (Fig. 7).…”

Improved resistive switching characteristics of solution processed ZrO2/SnO2 bilayer RRAM via oxygen vacancy differential

“…High-performance non-volatile memory plays a crucial role by efficiently storing data and providing fast access, while also preserving data even when the power is turned off. This type of memory is utilized in various applications, especially serving as an essential component in computer systems, embedded systems, and smart devices [1]. There are several candidates for the next generation of non-volatile memories, such as phase-change memory (PCM) [2], spin-transfer torque magnetic random access memory (STT-MRAM) [3], spin-orbit torque magnetic random access memory (SOT-MRAM) [4], and resistive random access memory (RRAM) [5].…”

Methods for Preparation of Hexagonal Boron Nitride Nanomaterials

“…BN nanosheets (BNNSs) and BN films represent the most common 2D structures; finally, 3D BN nanostructures include microscale structures such as 3D structures assembled from numerous 2D nanosheets and macroscale structures like porous foams and aerogels, which exhibit continuous structural characteristics in all three spatial dimensions. These diverse morphologies significantly influence the chemical, physical, and electronic properties of h-BN, rendering them highly attractive candidates for precise applications such as chemiluminescence assay, 15 aerospace engineering, 14 electronic devices, 16 and catalysis. 17 In recent decades, there has been a notable surge in the publication of studies focusing on h-BN nanostructures with diverse dimensions (Figure 1a), concurrently fostering a series of synthesis techniques aimed at precisely engineering controllable dimensions, shapes, and morphologies (Figure 1b).…”