Simultaneously high thermal stability and ultra-fast phase change speed based on samarium-doped antimony thin films

Abstract

In general, there is trade-off between the crystallization speed and the thermal stability. Here, the Sm–Sb materials simultaneously realize high thermal stability and the ultrafast phase change speed by Sm doping.

Application of Ge2Sb2Te5 phase change films in flexible memory devices

“…For PCM devices, the surface quality of the phase change film will affect its electrical properties and then affect the reliability of devices. 28 Fig. 6 shows the atomic force microscopy images of the S p films after different numbers of bending cycles with a scanning range of 1 μm × 1 μm.…”

Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

“…A synaptic memory cell was fabricated successfully using only a single active layer, i.e., Y 2 O 3 [ 13 ]. Unlike other RRAM devices, Y 2 O 3 -based RRAM devices do not undergo device performance degradation owing to oxygen bubble formation [ 15 ], toxicity [ 16 ], thermal instability [ 16 ], and pulsed voltage stress [ 17 ]. In single RRAM devices, the sneak path issue is critical for achieving high-density arrays.…”

Superlattice‐like Zn 15 Sb 85 /Ga 30 Sb 70 thin films for low power and ultrafast phase change memory application

“…In recent years, the conventional flash memory is facing a performance bottleneck due to its physical limit, such as limited data transfer rate and scaling down of cell size. In this study, many new non-volatile memories have been proposed and extensively studied [1]. Phase-change memory (PCM) is considered as one of the most promising candidates for future non-volatile data storage due to its advantages of fast operation speed, high capacity, good reliability, low power and so on [2].…”