Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

Abstract

Sol–gel-processed Y2O3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y2O3/Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased –OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y2O3 films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y2O3 films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period.

Recent progress of cotton fabric based on bio‐inspired modification for oil/water separation

“…Micro/nanopores and nanoparticles can be obtained after drying or heat treatment of the gel, which are great help to change the surface roughness of the materials. 24 Yang et al 25 added Zn (Ac) 2 solution to the prepared alkaline solution, and then ZnO sol was obtained under the reaction conditions of heating and stirring. Subsequently, it was dropped into the previously prepared tetrahydrofuran solution of polydimethylsiloxane (PDMS) in different weight ratios with the help of ultrasound to obtain a composite solution.…”

“…The sol–gel method is a kind of chemical method that uses the polymerization of monomers to form a sol, and then adjusts the parameters to connect the sols to form a gel with a certain three‐dimensional network structure. Micro/nanopores and nanoparticles can be obtained after drying or heat treatment of the gel, which are great help to change the surface roughness of the materials 24 …”

Thickness dependence of resistive switching characteristics of the sol–gel processed Y2O3 RRAM devices

“…In addition, its fast operation, low-power consumption, and extreme scalability are well matched with the aforementioned requirements for next-generation memory devices, overcoming the limitations of conventional flash memories. Many oxides have been used as active channel layers, such as SiO x , ZrO 2 , TiO x , Hf x O, and Y 2 O 3 [7][8][9][10][11][12][13][14][15][16][17]. Among these, Y 2 O 3 has several advantages.…”

Sol–Gel-Processed Y2O3–Al2O3 Mixed Oxide-Based Resistive Random-Access-Memory Devices

“…To realize RRAM devices, many metal oxides (such as ZrO 2 , HfO 2 , TiO 2 , and Y 2 O 3 ) have been studied for use in the active channel layers of RRAM devices [8][9][10][11][12][13][14][15][16][17][18]. Y 2 O 3 has been investigated to replace the low-k SiO 2 dielectric layers with high-k ones during CMOS processes in industries.…”