Simultaneously good thermal stability and low power consumption for Sb/In48.9Sb15.5Te35.6 multilayer composite film

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

“…In light of the Joule heat formula Q = I 2 •R•t, in a self-heating system utilizing the thermal effect of current, the increase in resistance helps to reduce the power consumption of phase change film during reversible transformation operations. With the increase in holding time, phase transition occurs when the film accumulates to a certain amount of energy [12]. Due to the division of the crystallization process of the film into four stages, namely the incubation period, the nucleation period, the growth period and the grain coarse period, the crystallization curve of the film presents a slow and then steep decline process.…”

“…It has been reported that the carrier density in semiconductors is proportional to [−Eg/(2kT)]. The band gap decreases, then the carrier will increase [12,20]. This is also the reason why the resistivity of the sample declines when the annealing temperature gradually increases.…”

Application of Ge2Sb2Te5 phase change films in flexible memory devices

“…4. The energy band gap value of the material is calculated using the Kubelka–Munk function (K–M): 22,23 K / S = (1 − R ) 2 /(2 R )where R is the reflectivity, K is the absorption coefficient, and S is the scattering coefficient. As can be discerned from Fig.…”

Performance Improvement of Sb Phase Change Thin Film by Y Doping

“…25 The large electrical resistances are favorable for the phase transition by Joule heating under the electric pulse current. 26 Moreover, the large resistance difference between the amorphous and crystalline states provides the PCM with a large signal-to-noise ratio for reliable readout operation. 27 The data retention temperature curves are shown in Fig.…”