Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

Simultaneously higher thermal stability and lower resistance drifting for Sb/In48.9Sb15.5Te35.6 nanocomposite multilayer films

“…8a that the threshold voltage V th of the [Sb(9 nm)/IST(1 nm)] 8 nanocomposite multilayer film was only 1.01 V, which was far smaller than GST (∼4.18 V). 31 The results demonstrated that the [Sb(9 nm)/IST(1 nm)] 8 films had low SET power consumption. Fig.…”

“…30 As shown in the illustration of Fig. 4, by fitting the curve slope according to the modified Bragg's equation, 31 the thickness change rate of the [Sb(9 nm)/IST(1 nm)] 8 multilayer films after crystallization was determined to be only 3.1%. Compared with the traditional GST film (6.5%), 32 the thickness change rate of the [Sb(9 nm)/IST(1 nm)] 8 films was small.…”

“…It was calculated that the RESET operation energy of the PCM device based on [Sb(9 nm)/IST(1 nm)] 8 was about 3.41 × 10 −10 J, lower than GST (9.7 × 10 −9 J). 31 The lower RESET power consumption would help to speed up the resistance conversion and was conducive to the miniaturization and high density of PCM devices.…”

Application of Ge2Sb2Te5 phase change films in flexible memory devices

“…[24][25][26] In addition, the diffraction peaks become broader as the number of bending cycles increases. So as to compare the grain sizes, we calculated the grain size by means of the Scherrer formula: 27 D hkl = 0.943λ/(β cos θ)…”

“…24–26 In addition, the diffraction peaks become broader as the number of bending cycles increases. So as to compare the grain sizes, we calculated the grain size by means of the Scherrer formula: 27 D hkl = 0.943 λ /( β cos θ )where D hkl , λ , β , and θ represent the grain size, the X-ray wavelength (0.1540 nm), the half-height width of the diffraction peak, and the Bragg diffraction angle, respectively. The grain sizes of the flat, bending-5000, and bending-10 000 films after annealing were 13.194, 12.512, and 9.824 nm, respectively.…”