Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films

Guo, Xuan; Hu, Yifeng; Chou, Qingqian; Lai, Tianshu

doi:10.1007/s10854-019-02290-0

Cited by 6 publications

(1 citation statement)

References 18 publications

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“…Correspondingly, the surface roughness of the film increases from 0.2228 nm in the deposited state to 0.4879 nm at 142 • C, indicating that the surface fluctuation becomes larger due to the growth of the grains. However, the surface is still relatively flat in the crystal state, which is beneficial to maintain the effective contact between the electrode and the film, and helps to improve the reliability of the device [28]. Figure 7i-l show the surface potential of the thin film.…”

Section: Resultsmentioning

confidence: 99%

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Zhu

et al. 2023

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In this paper, pure Sb and composite multilayer In2Se3/Sb thin films were prepared on a SiO2/Si substrate. The effects of the addition of In2Se3 interlayers on the physical and electrical properties of phase change thin films were investigated. Compared with pure Sb film, the composite multilayer In2Se3/Sb film had a higher crystallization temperature (~145 °C), larger crystallization activation energy (~2.48 eV), less resistance drift (~0.0238) and better thermal stability. The results of X-ray photoelectron spectroscopy indicated that the In-Sb bond was formed in the multilayer In2Se3/Sb film. The near infrared spectrophotometer showed that the band gap changed at different annealing temperatures. Changing the annealing temperature of the film allowed for the phase structure of the film to be studied by using X-ray diffractometer. The surface morphology and electrostatic potential at different annealing temperatures were using atomic force microscope. It was found that the flat film had a smoother surface. Phase-change memory devices based on [In2Se3(4 nm)/Sb(6 nm)]8 film reduced power consumption by approximately 74% compared to pure Sb film. In conclusion, the In2Se3 interlayers effectively inhibited the resistance drift of the phase change thin film and enhanced its thermal stability.

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Section: Resultsmentioning

confidence: 99%

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Zhu

et al. 2023

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Investigation of V2O5/Ge8Sb92 multilayer thin film for high-data-retention and high-speed phase change memory applications

Sun

et al. 2020

Appl. Phys. A

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Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/Sb superlattice-like films on a flexible substrate

Cao

2023

Ceramics International

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Insulator–metal transition and ultrafast crystallization of Ga40Sb60/Sn15Sb85 multiple interfacial nanocomposite films

Cited by 6 publications

References 18 publications

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Enhancing the Thermal Stability and Reducing the Resistance Drift of Sb Phase Change Films by Adding In2Se3 Interlayers

Investigation of V2O5/Ge8Sb92 multilayer thin film for high-data-retention and high-speed phase change memory applications

Phase transition behavior and electrical resistance stability of Ge2Sb2Te5/Sb superlattice-like films on a flexible substrate

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