Simultaneous mapping of bulk and surface recombination in silicon

Ostendorf, H.-C.; Endrös, A.L.

doi:10.1063/1.120311

Cited by 17 publications

(5 citation statements)

References 22 publications

(13 reference statements)

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“…Another possibility for a nondestructive evaluation of surface recombination velocity is the so-called two-color method. 20 In this method, the photocurrent is subsequently measured by injecting current with lasers of two wavelengths, hence different penetration depths. Surface recombination velocity is obtained from the ratio between photocurrents injected by lasers with different penetration depths.…”

Section: Methodsmentioning

confidence: 99%

Detection of Metal Segregation at the Oxide-Silicon Interface

Polignano

Giussani

Caputo

et al. 2002

J. Electrochem. Soc.

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Various techniques for the detection of metal segregation at wafer surface were compared by using nickel and cobalt implanted wafers as the test vehicles. Generation lifetime gave the maximum sensitivity. Noncontact interface state density measurements have limited sensitivity and require an integration of the spectrum over the measurement energy range. The Elymat surface recombination velocity is a compromise between sensitivity and mapping capabilities. Nickel is a fast diffuser and completely segregates at wafer surface, as reported in literature. So, nickel cannot be detected by measurements of bulk diffusion length, neither by surface photovoltage (SPV) nor by Elymat techniques. Cobalt does segregate at wafer surface, but in spite of what is reported, some cobalt is left in the bulk even after a thermal treatment with a slow ramp-down (furnace treatment). Cobalt surface segregation is negligible after thermal treatment with a fast ramp-down so standard bulk lifetime techniques such as Elymat or SPV can be used for monitoring purposes. © 2002 The Electrochemical Society. All rights reserved.

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Section: Methodsmentioning

confidence: 99%

Detection of Metal Segregation at the Oxide-Silicon Interface

Polignano

Giussani

Caputo

et al. 2002

J. Electrochem. Soc.

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“…This method is sometimes referred to as the "multicolor method." 15 For a correct evaluation of surface recombination, it must be considered that the total injected current can be different if the wafer surface is covered by an aqueous solution (such as the HF solution, injected current I 0 ) with respect to the case when there is no solution at the wafer front side (injected current I* 0 ). This difference can be due, for instance, to the different reflection properties of the wafer surface/solution and wafer surface/air interfaces, or to light absorption by the solution.…”

Section: Methodsmentioning

confidence: 99%

Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications

Polignano

Bellafiore

Caputo

et al. 1999

J. Electrochem. Soc.

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Photocurrent measurements can provide an easy method for evaluating surface recombination velocity and for mapping this quantity over a silicon wafer. This method is validated for the characterization of Si-SiO 2 interfaces by comparison with surface-state density data measured in simultaneously processed capacitors. In addition, destructive and nondestructive approaches to this measurement are discussed and compared. The correlation to be expected between destructive and nondestructive measurements of surface recombination is calculated by a theoretical model and experimentally verified. Finally, surface recombination velocity measurements are used for the characterization of oxidation equipment and processes.

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“…Since the absorption coefficient strongly depends on the wavelength, electron-hole pair generation varies with the wavelength, the initial bulk carrier density profiles in particular, are affected by surface recombination in a different way. 7,8 To determine the bulk lifetime of wafers having different surface recombination velocities, it is necessary to perform measurements by pumping the sample from each side and to separately carry out a detailed analysis of the shape of the decay curve. In order to extract the values of b , S 1 , and S 2 three independent parameters are needed and they have to be taken from measured data.…”

Section: Theoretical Modelingmentioning

confidence: 99%

All-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples

Sirleto

Irace

Vitale

et al. 2003

Journal of Applied Physics

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In this article, a contactless, all-optical, nondestructive method for separating the minority carrier recombination lifetime and surface recombination velocities in silicon samples at a low injection level is presented. The technique can be described as a pump–probe method in which the excess carrier density is probed by analyzing the free carrier absorption transient following laser pulse excitation that have several wavelengths. An attractive characteristic of the proposed technique is its capability to measure different values of surface recombination velocity on front and back surfaces of the silicon sample. The theoretical foundation of the method is also analyzed. Moreover, numerical simulations which validate the proposed methodology and preliminary experimental results that prove the applicability of scheme are presented.

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Simultaneous mapping of bulk and surface recombination in silicon

Abstract: All-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples

Cited by 17 publications

References 22 publications

Detection of Metal Segregation at the Oxide-Silicon Interface

Detection of Metal Segregation at the Oxide-Silicon Interface

Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications

All-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples

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