Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering

Wu, Yecun; Fuh, Huei‐Ru; Zhang, Duan; Coileáin, Cormac Ó; Xu, Hongjun; Cho, Jiung; Choi, Miri; Chun, Byong Sun; Jiang, Xuju; Abid, Muhammad; Abid, Mohamed; Liu, Huajun; Wang, Jing Jing; Shvets, I. V.; Chang, Chih Shiang; Wu, Han‐Chun

doi:10.1016/j.nanoen.2016.12.034

Cited by 45 publications

(42 citation statements)

References 52 publications

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“…More recently, 2D materials of group‐III monochalcogenides were predicted piezoelectric in their monolayer form by first‐principles calculations . Experimentally, Jia et al first reported the observation of strong piezo‐phototronic effect in 2D GaSe based photodetector due to its remarkable semiconducting and optical properties and attractive piezoelectric feature . Figure a presents the schematic drawing of setup for studying the strain effect on the performance of GaSe photodetector.…”

Section: Iii–vi Semiconductor‐based Optoelectronic Devicesmentioning

confidence: 99%

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Yang

Hao

2019

Adv Materials Technologies

109

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During the past decade, great effort has been devoted to research on 2D layered materials due to their reduced thickness and extraordinary physical properties, which open new opportunities for developing next‐generation applications in various fields. Ultrathin III–VI semiconductors (e.g., GaSe, InSe, In2Se3, etc.) have emerged as potential candidates for nano‐optoelectronic applications thanks to their sizable layer‐dependent bandgaps and high carrier mobility, which could enable broadband photodetection and efficient conversion of solar energy. A systematic review is provided on 2D III–VI semiconductor‐based state‐of‐the‐art optoelectronic devices, such as phototransistors, photoconductors, and solar cells, reported in recent years. To better understand the mechanism and performance of the devices, an introduction to the electronic structures and optical properties of several representative III–VI members is first given. A comprehensive overview is then given on device geometry design, operating principles, and performance in optoelectronic applications based on III–VI semiconductors and their heterostructures. The techniques to enhance the performances of devices are also discussed. Finally, a brief discussion on the challenges and future opportunities in this field is provided.

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Section: Iii–vi Semiconductor‐based Optoelectronic Devicesmentioning

confidence: 99%

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Yang

Hao

2019

Adv Materials Technologies

109

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“…As a result, 2D materials are highly suitable for gas sensing via modulating the carrier density and shifting the Fermi level 12,13 . Last but not least, 2D materials can be easily functionalized by molecular doping, which can be used to modify their electronic, optical, and thermoelectric properties [17][18][19][20][21][22][23] , in addition to strain engineering and heterogeneous construction 24,25 .…”

Section: Introductionmentioning

confidence: 99%

Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing

Cai

Zhang

2017

J. Phys. Chem. C

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First-principles calculations are performed to investigate the effects of the adsorption of gas molecules (CO, NO,NO 2 , H 2 S, N 2 , H 2 O, O 2 , NH 3 and H 2 ) on the electronic properties of atomically thin indium selenium (InSe). Our study shows that the lone-pair states of Se are located at the top of the valence band of InSe and close to the Fermi energy level, implying its high sensitivity to external adsorbates. Among these gas molecules, H 2 and H 2 S are strong donors, NO, NO 2 , H 2 O and NH 3 are effective acceptors, while CO and N 2 exhibit negligible charge transfer. The O 2 molecule has very limited oxidizing ability and a relatively weak interaction with InSe which is comparable to the N 2 adsorption. A clear band gap narrowing is found for the H 2 S, NO 2 , and NH 3 adsorbed systems whereas a Fermi level shifting to the conduction band is observed upon a moderate uptake of H 2 molecules. Our analysis suggests several interesting applications of InSe: 1). Due to the different interaction behaviors with these external molecules, InSe can be used for gas sensing applications; 2). by monitoring the adsorption/desorption behavior of these gas molecules, the population of hole states in InSe due to photon stimulation or defect production can be quantitatively estimated; and 3). it is promising for novel electronic and optoelectronic applications since the adsorption-induced in-gap states and strong 2 charge transfer are able to change the content and polarity of charged carriers and lead to different optical properties.

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“…Recently, the photoluminescence enhancement and bandgap change for GaSe nanosheets on polyethylene terephthalate (PET) substrate were observed by bending PET with deformed strain. 20 The result showed the bandgap is decreased with tensile strain existed in the GaSe layer. However, the soy and easy-deformation character of the PET resulted in layer wrinkles and non-uniform strain distribution on the GaSe nanosheets, which caused the difficulty on estimate of actual strain effect.…”

mentioning

confidence: 99%

Curvature-dependent flexible light emission from layered gallium selenide crystals

et al. 2018

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Simultaneous large continuous band gap tunability and photoluminescence enhancement in GaSe nanosheets via elastic strain engineering

Cited by 45 publications

References 52 publications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

Charge Transfer and Functionalization of Monolayer InSe by Physisorption of Small Molecules for Gas Sensing

Curvature-dependent flexible light emission from layered gallium selenide crystals

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