Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique

Hung, Chi-Chao; Lin, Horng−Chih; Wang, Mengfan; Huang, Tiao–Yuan; Shih, Han C.

doi:10.1016/s0167-9317(02)00555-5

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Cited by 6 publications

(1 citation statement)

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“…A use of F atom should be minimized in deep trench silicon etching for ideal anisotropic etching because F and Cl can cause spontaneous etching (Hung et al, 2002). Fig.…”

Section: Resultsmentioning

confidence: 99%

Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources

Choi

Kim

2009

Journal of Materials Processing Technology

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“…A use of F atom should be minimized in deep trench silicon etching for ideal anisotropic etching because F and Cl can cause spontaneous etching (Hung et al, 2002). Fig.…”

Section: Resultsmentioning

confidence: 99%

Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources

Choi

Kim

2009

Journal of Materials Processing Technology

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Surface modification of POSS‐nanocomposite biomaterials using reactive oxygen plasma treatment for cardiovascular surgical implant applications

Solouk

Cousins

Mirzadeh

et al. 2011

Biotech and App Biochem

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In this study, central composite design (CCD) was used to develop predictive models to optimize operating conditions of plasma surface modification. It was concluded that out of the two process variables, power and duration of plasma exposure, the latter was significantly affecting the surface energy (γ(s) ), chemistry, and topography of polyhedral oligomeric silsesquioxane-poly(carbonate-urea)urethane (POSS-PCU) films. On the basis of experimental data, CCD was used to model the γ(s) using a quadratic modeling of the process variables to achieve optimum surface energy to improve the interaction between endothelial cells (ECs). It was found that optimal water θ for EC adhesion and retention, which was reported 55° from supporting literature (equivalent to γ(s) = 51 mN/m), was easily achievable using the following experimental conditions: (1) power output at 30 W for 75 Sec, (2) 90 W for 40 Sec, and (3) 90 W for 55 Sec in oxygen. In vitro cell culture and metabolic activity studies on optimized films [as in (1)] demonstrate increased adhesion, coverage, and growth of human umbilical vein endothelial cells that were confluent over a shorter time period (<24 H) than controls. Such materials enhanced the EC response and promoted endothelialization on optimized films, thus demonstrating their use as bypass graft materials.

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Surface modification of polypropylene using argon plasma: Statistical optimization of the process variables

Nageswaran

Neogi

2009

Applied Surface Science

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Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique

Cited by 6 publications

References 16 publications

Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources

Reduction of loading effects with the sufficient vertical profile for deep trench silicon etching by using decoupled plasma sources

Surface modification of POSS‐nanocomposite biomaterials using reactive oxygen plasma treatment for cardiovascular surgical implant applications

Surface modification of polypropylene using argon plasma: Statistical optimization of the process variables

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