Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1−xAlxAs multiple quantum wells

Restrepo, R.L.; Miranda, Guillermo L.; Duque, C.A.

doi:10.1016/j.jlumin.2011.01.014

Cited by 15 publications

(1 citation statement)

References 24 publications

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“…The presence of an external electric field in nanostructures has several effects on the structure of sub-bands depending on its symmetry. For instance, in the case of multiple quantum wells, the presence of an external electric homogeneous field or an internal electric field in a transversal direction to the barrier changes the energy of electronic states [6,7]. It has also been reported [8,9] that polarizability and binding energy of a shallow donor in quantum dots change with variations in the electric field intensity.…”

Section: Introductionmentioning

confidence: 99%

Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire

Betancourt-Riera,

Ferrer-Moreno

et al. 2023

Mater. Res. Express

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In this work, the influence of an external electric field is studied in two cases: one-phonon resonant Raman scattering and one-phonon electron Raman scattering, processes that occur in a semiconductor quantum wire with cylindrical symmetry and finite potential barriers. Where we have considered that the electric field is homogeneous and transversal to the system axis. To carry out this study, we obtain a mathematical expression for the differential cross-section for both Raman processes, where for one-phonon resonant Raman scattering, intra-band and inter-band optical transitions are considered, while for one-phonon electron Raman scattering, only intra-band optical transitions are considered. Therefore, to determine the electronic states, we use a valid model when the electric field is weak with respect to confinement. In the case of the Fröhlich electron-phonon interaction, we use a model in which the oscillation modes are completely confined, a model that was developed within the framework of a macroscopic continuum model. Then, the singularities present in the Raman spectra and the effect of the electric field on their position and intensity are analyzed. Finally, how the electric field affects the electron-phonon interaction and the selection rules for optical transitions in a semiconductor quantum wire with cylindrical symmetry are shown.

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Section: Introductionmentioning

confidence: 99%

Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire

Betancourt-Riera,

Ferrer-Moreno

et al. 2023

Mater. Res. Express

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High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

Rodríguez-Magdaleno

Martı́nez-Orozco

Rodrı́guez-Vargas

et al. 2015

Physica Status Solidi (b)

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In the framework of the effective mass approximation and using a Thomas–Fermi‐like model for the conduction band potential energy profile, the effects of hydrostatic pressure on the linear and nonlinear intersubband optical response of an asymmetric double δ‐doped quantum well are studied. In particular, the intersubband coefficients of light absorption and the relative refractive index change in the system were calculated. It is found that the pressure causes a redshift of the signal response as well as a reduction in the coefficients's amplitudes. We have also found that the asymmetry of the potential profile clearly affects the relative refractive index change because, as long as the system becomes more asymmetric, this physical property becomes diminished.

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Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Özkapı

Mese²,

Cicek³

et al. 2022

Physica Status Solidi (b)

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The effect of the external electric field on the ground state binding energy and self‐polarization of a hydrogenic donor impurity in quantum wells (QWs) made of different materials is calculated within the effective mass approximation using a variational scheme. The variations of binding energy and self‐polarization depending on well width, electric field, and impurity position have been studied in detail. For each QW made of different materials, it has been observed that the binding energy decreases with the increase of the electric field, whereas the self‐polarization increases. Also, it has been observed that InP/In1−x Ga x P has higher binding energy values among the structures discussed. It is seen that material selection has a noticeable effect on self‐polarization and binding energy in QW‐based structures.

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Simultaneous effects of hydrostatic pressure and applied electric field on the impurity-related self-polarization in GaAs/Ga1−xAlxAs multiple quantum wells

Cited by 15 publications

References 24 publications

Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire

Effects of an external electric field on one-phonon resonant and electron Raman scattering in a semiconductor quantum wire

High‐pressure effects on the intersubband optical absorption coefficient and relative refractive index change in an asymmetric double ‐doped GaAs quantum well

Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

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