Self‐Polarization of Hydrogenic Impurity in Quantum Wells Made of Different Materials

Özkapı, Barış; Mese, A.I.; Cicek, E.; Erdoǧan, I.

doi:10.1002/pssb.202200059

Cited by 3 publications

(7 citation statements)

References 49 publications

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“…

\cdot E_{\text{g}}^{\Gamma} \left(\right. x \left.\right)

is the bandgap of heterostructure at the Γ point and, for four different structures, is defined as follows [ 20,48 ]

$$\Delta E_{\text{g}}^{\Gamma} \left(\right. x \left.\right) = \left{\right.

…”

Section: Theorymentioning

confidence: 99%

“…The conduction band offset parameters are taken as

Q_{\text{c}} = 0.6

for QD1 and QD2,

Q_{\text{c}} = 0.5

for QD3, and

Q_{\text{c}} = 0.3

for QD4 and x = 0.35 is fixed for four different structures. [ 20,49–53 ]…”

Section: Theorymentioning

confidence: 99%

“…where Q c is the conduction band offset parameter. ⋅E Γ g ðxÞ is the bandgap of heterostructure at the Γ point and, for four different structures, is defined as follows [20,48] ΔE Γ g ðxÞ ¼…”

Section: Theorymentioning

confidence: 99%

“…Examining the binding energy and transition energy for structures made of different materials is of great importance in determining the physical and optical properties. Ozkapi et al [ 20 ] investigated the changes in binding energy and self‐polarization depending on the well width, impurity position and external electric field in quantum wells for the four structures discussed in this study. On the other hand, Mese [ 47 ] investigated the temperature‐dependent changes of ground, and excited states binding energies, intradonor transition energy between the 1 s and 1 p states, and intradonor normalized transition energies in the cylindrical quantum dot made of Ga 1− x Al x As/GaAs.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14] In particular, QDs based on GaAs/GaAlAs (QD1), InAs/InGaAs (QD2), InAs/InAlAs (QD3), and InP/InGaP (QD4), which are composed of semiconductor materials, are widely used in various application areas, especially in microelectronic and optoelectronic devices. [15][16][17][18][19][20] Also, impurities play an important role in understanding the optical and electronic properties of such structures. [21][22][23][24] In addition, extensive theoretical and experimental research has been published on the optical and electronic properties, excitons, and impurity levels in QDs.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Calculation of Intradonor Normalized Transition Energy in Spherical Quantum Dots Made of Different Materials

Mese

Cicek

Özkapı

et al. 2023

Physica Status Solidi (b)

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Under the effective mass approximation, the binding energies, transition energies between 1s and 1p states, and normalized transition energies of spherical quantum dots made of different materials are calculated using the variational method. In particular, binding, transition, and normalized transition energies are examined depending on the radius of the quantum dot and the position of the hydrogenic impurity. It is observed that the binding energy and transition energy decrease as the radius of the quantum dot increases, whereas the normalized transition energy increases. In all four different structures, it is seen that the binding energy first reaches a maximum and then starts to decrease according to the position of the hydrogenic impurity. In contrast, the transition energy behaves almost the opposite. Additionally, when the change of the normalized transition energy is examined according to the impurity position, it is determined that it decreases up to the value of ri/R = 0.6 and then remains almost constant. According to our literature review, the normalized transition energy for the four different quantum dots is calculated for the first time in this study.

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