The effect of the external electric field on the ground state binding energy and self‐polarization of a hydrogenic donor impurity in quantum wells (QWs) made of different materials is calculated within the effective mass approximation using a variational scheme. The variations of binding energy and self‐polarization depending on well width, electric field, and impurity position have been studied in detail. For each QW made of different materials, it has been observed that the binding energy decreases with the increase of the electric field, whereas the self‐polarization increases. Also, it has been observed that InP/In1−x
Ga
x
P has higher binding energy values among the structures discussed. It is seen that material selection has a noticeable effect on self‐polarization and binding energy in QW‐based structures.
Under the effective mass approximation, the binding energies, transition energies between 1s and 1p states, and normalized transition energies of spherical quantum dots made of different materials are calculated using the variational method. In particular, binding, transition, and normalized transition energies are examined depending on the radius of the quantum dot and the position of the hydrogenic impurity. It is observed that the binding energy and transition energy decrease as the radius of the quantum dot increases, whereas the normalized transition energy increases. In all four different structures, it is seen that the binding energy first reaches a maximum and then starts to decrease according to the position of the hydrogenic impurity. In contrast, the transition energy behaves almost the opposite. Additionally, when the change of the normalized transition energy is examined according to the impurity position, it is determined that it decreases up to the value of ri/R = 0.6 and then remains almost constant. According to our literature review, the normalized transition energy for the four different quantum dots is calculated for the first time in this study.
In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics.
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