Simulation study of ZnO nanowire FET arrays for photosensitivity enhancement of UV photodetectors

Bafghi, Zohreh Golshan; Manavizadeh, Negin

doi:10.1016/j.spmi.2018.08.028

Cited by 17 publications

(2 citation statements)

References 45 publications

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“…As illustrated in figure 4, the simulated values of J light with the applied reverse bias voltage at center wavelength are well in accordance with the values obtained analytically. The measured value of J light is larger than previously reported studies in [8,28,41,46]. Under self-powered mode, the ratio J light /J dark is 2.37 × 10 5 , 3.95 × 10 9 , and 1.42 × 10 13 for Device I, II, and III, respectively.…”

Section: Resultscontrasting

confidence: 63%

A highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral response

et al. 2020

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This paper presents three self-powered photodetectors namely, p+-bilayer graphene (BLG)/n+-ZnO nanowires (NWs), p+-BLG/n+-Si NWs/p–-Si and p+-BLG/n+-ZnO NWs/p–-Si. The Silvaco Atlas TCAD software is utilized to characterize the optoelectronic properties of all the devices and is validated by analytical modeling. The proposed dual-junction photodetectors cover broadband spectral response varying from ultraviolet to near-infrared wavelengths. The dual-heterojunction broadband photodetector exhibits photocurrent switching with the rise and fall time of 1.48 and 1.27 ns, respectively. At −0.5 V bias, the highest external quantum efficiency, photocurrent responsivity, specific detectivity, and the lowest noise equivalent power of 71%, 0.28 A W−1, 4.2 × 1012 cmHz1/2 W−1, and 2.59 × 10–17 W, respectively, are found for the dual-heterojunction device with a wavelength of 480 nm at 300 K. The proposed nanowires based photodetectors offer great potential to be utilized as next-generation optoelectronic devices.

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Section: Resultscontrasting

confidence: 63%

A highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral response

et al. 2020

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“…On the other hand, back reflection has not been considered during the simulation. Zinc oxide (ZnO) comes under the category of wide band gap semiconductor material having energy gap of 3.37 eV [24]. ZnO material is highly useful for photo sensing and opto coupler applications due to their high optical transmittance and absorbance property in visible and IR regions.…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

Tiwari,

Saha

2023

Phys. Scr.

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This paper presents the optical performance of T-shape TFET based photo sensor under visible range of spectrum using a technology computer-aided design (TCAD) Synopsys simulator. The optical insight of photo device results the enhancement in spectral sensitivity (Sn), Signal to noise ratio (SNR), Responsivity (R), recombination rate, Drain current and optical generation rate. The result reveals that device under illumination reports magnitude of SNR are 67.79, 47.38, and 38.3 dB at λ= 300, 500, and 700 nm, respectively. Finally, a comparison table introduce to compare the sensitivity of proposed TFET based photo sensor with already simulated FET based sensor.

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Unsophisticated one-step synthesis super hydrophilic self-cleaning coating based on ZnO nanosheets

2021

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Simulation study of ZnO nanowire FET arrays for photosensitivity enhancement of UV photodetectors

Cited by 17 publications

References 45 publications

A highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral response

A highly efficient bilayer graphene/ZnO/silicon nanowire based heterojunction photodetector with broadband spectral response

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

Unsophisticated one-step synthesis super hydrophilic self-cleaning coating based on ZnO nanosheets

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