Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance

Zhang, Meng; Wei, Jin; Zhou, Xianda; Jiang, Huaping; Li, Baikui; Chen, Kevin J.

doi:10.1109/led.2018.2881234

Cited by 32 publications

(17 citation statements)

References 23 publications

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“…Another solution is integrating Schottky diode but it causes larger degradations of IDS, integration level, and high temperature characteristics [14][15][16][17][18][19]. Recently, a novel technology for power MOSFET with built-in channel diode (BCD) has been proposed to solve such a problem [20][21][22][23]. O. Häberlen and his team proposed a conventional SGT MOS with BCD (CBCD-SGT) which is arranged one BCD and three normal cells alternately, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Li¹,

Jia

Zhou

et al. 2021

IEEE J. Electron Devices Soc.

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Section: Introductionmentioning

confidence: 99%

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Li¹,

Jia

Zhou

et al. 2021

IEEE J. Electron Devices Soc.

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“…However, leakage current increases dramatically, and device long-term reliability is weakened. Integrating built-in MOS channel diode has been used to reduce the minority carrier injection of the body P-N junction diode of SJ-MOSFET [13][14]. Unfortunately, the thin oxide or the lowly doped P-base of the MOS channel diode causes an increase in leakage current and steps of fabrication process.…”

Section: Introductionmentioning

confidence: 99%

A Novel Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Loss

Xia

Chen

Zhang

et al. 2021

Preprint

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A novel superjunction MOSFET (SJ-MOSFET) for ultralow reverse recovery charge (Q RR ) and low switching loss is proposed and investigated. This device features a P-type Schottky diode and a source field-plate. The P-type Schottky diode consists of Schottky contact and P-base, which is reverse series-connected with body P-N junction diode. And the source field-plate is formed by implementing a polysilicon field-plate electrically coupled to the source, which is on the top of N-pillar. During the reverse conduction state, the P-type Schottky diode is reverse biased, which dramatically suppresses minority carriers injecting into the drift region. Simultaneously, electron accumulation layer formed under the source field-plate, which provides a path for the reverse current. Consequently, compared with the conventional SJ-MOSFET (Conv-SJ-MOSFET), the proposed SJ-MOSFET achieves an 84.0% lower Q RR with almost no sacrifice in other characteristics. Moreover, the proposed device also exhibits 47.4% and 66.0% lower gate charge (Q G ) and gate to drain charge (Q GD ), respectively. The significantly reduced Q G , Q GD , and Q RR contribute to an overall improvement in switching losses and resultant over 54.8% decrease in total power losses with operation frequency higher than 50 kHz, demonstrating great potential of the proposed SJ-MOSFET used in power conversion systems.

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“…The DioMOS structure [13] [14], which enables the forward and reverse current to flow through the same accumulation channel, is another effective design. Lately, it comes to our attention that a Si-based power MOSFET with built-in channel diode has been proposed to enhance the reverse recovery performance of the device [15]. The channel diode is turned on in competition with the body diode under reverse operation mode, thus reducing the injected minority carriers in the drift region.…”

Section: Introductionmentioning

confidence: 99%

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

Zhou

Gong

Jia

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, the SiC planar MOSFET with built-in reverse MOS-channel diode (SiC MCD-MOSFET) is investigated utilizing TCAD simulation tools. When the device is working as a freewheeling diode, the operation of the parasitic body diode is suppressed effectively due to the lower threshold voltage of the MCD. Therefore, the bipolar degradation issue can be completely solved. In addition, the SiC MCD-MOSFET is featuring superior dynamic characteristics. The input capacitance (CISS), reverse transfer capacitance (C RSS), gate charge (Q G) and gate-to-drain charge (Q GD) are reduced by a factor of ~2, ~7, ~2 and ~10, respectively, as compared to the conventional SiC MOSFET (SiC C-MOSFET). Combined with the slightly increased on-resistance (R ON), tremendously enhanced figures of merit (R ON ×Q G and R ON ×Q GD are decreased by a factor of 1.8 and 9, respectively) are obtained in the SiC MCD-MOSFET. The outstanding performance and easy-to-implement feature make the SiC MCD-MOSFET more attractive for further power electronic applications. Index Terms SiC planar MOSFETs, bipolar degradation, dynamic performance.

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Simulation Study of a Power MOSFET with Built-in Channel Diode for Enhanced Reverse Recovery Performance

Cited by 32 publications

References 23 publications

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

A Novel Superjunction MOSFET with Ultralow Reverse Recovery Charge and Low Switching Loss

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

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