A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Li, Xinyu; Jia, Yunpeng; Zhou, Xintian; Zhao, Yuanfu; Wu, Yu; Hu, Dongqing; Fang, Xingyu; Deng, Zhonghan

doi:10.1109/jeds.2021.3113957

Cited by 5 publications

(2 citation statements)

References 27 publications

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“…In order to realize this alternative, the reverse recovery performance needs to be improved. In order to overcome the abovementioned two issues (high conduction loss and bipolar degradation), that is to say, improving the reverse recovery performance of the parasitic body diode, many solutions have been utilized, such as the introduction of a Schottky contact [ 15 , 16 , 17 ] and integrating a channel diode [ 18 , 19 , 20 , 21 ] in the SiC VDMOSFET. Compared with SiC VDMOSFET, LDMOS is better for integration and is beneficial to the miniaturization of the AC-DC electric system.…”

Section: Introductionmentioning

confidence: 99%

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

2023

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In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.

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Section: Introductionmentioning

confidence: 99%

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

2023

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“…A SiC MOSFET with a MOS-Channel diode is another solution raised recently, but a strong electric field at the edge of the dummy gate may cause reliability issues [ 10 , 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

et al. 2022

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In this paper, a 650 V 4H-SiC trench Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a hetero-junction diode (HJD) and double current spreading layers (CSLs) is proposed and studied based on Sentaurus TCAD simulation. The HJD suppresses the turn-on of the parasitic body diode and improves the performance in the third quadrant. CSLs with different doping concentrations help to lower the on-state resistance as well as the gate-drain capacitance. As a result, the on-state resistance is decreased by 47.82% while the breakdown voltage remains the same and the turn-on and turn-off losses of the proposed structure are reduced by 83.39% and 68.18% respectively, compared to the conventional structure.

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A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts

Tan,

Deng,

Wang

et al. 2023

2023 2nd Asia Power and Electrical Technology Conference (APET)

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A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Cited by 5 publications

References 27 publications

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

A Fast-Recovery Split Gate Trench MOSFET Integrated with Area-Efficient Schottky Contacts

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