2019
DOI: 10.1557/jmr.2019.204
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Simulation studies of Sn-based perovskites with Cu back-contact for non-toxic and non-corrosive devices

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Cited by 10 publications
(5 citation statements)
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“…In particular, the FF of the device, which represents the effectiveness of charge transport in the device without any recombination losses, shows a reduction when back contacts with low value of work function are employed. This indicates that the recombination losses are high when low‐ work function back‐metal contacts are incorporated into the device structure 38 . The present study shows that the decrease in FF with decrease in the work function value of the back‐contact metal is higher for PSCs with Sn based perovskite absorber layers when compared to that with Pb based perovskite absorber layers.…”
Section: Resultsmentioning
confidence: 65%
See 1 more Smart Citation
“…In particular, the FF of the device, which represents the effectiveness of charge transport in the device without any recombination losses, shows a reduction when back contacts with low value of work function are employed. This indicates that the recombination losses are high when low‐ work function back‐metal contacts are incorporated into the device structure 38 . The present study shows that the decrease in FF with decrease in the work function value of the back‐contact metal is higher for PSCs with Sn based perovskite absorber layers when compared to that with Pb based perovskite absorber layers.…”
Section: Resultsmentioning
confidence: 65%
“…The present study shows that the decrease in FF with decrease in the work function value of the back‐contact metal is higher for PSCs with Sn based perovskite absorber layers when compared to that with Pb based perovskite absorber layers. This is because the Sn based perovskite absorber layers have more defect centres and recombination centres than the Pb based perovskite absorber layers 38 . The study shows that Au can act as a suitable back contact for PSCs.…”
Section: Resultsmentioning
confidence: 92%
“…29 The FF relates to charge route resistance and represents the efficiency with which holes and electrons transit the cell without loss. 31,32 As the perovskite's thickness increased, the ll factor decreased. FF decreased from 78.3% at 100 nm to 43.29% at 1000 nm as the thickness increased.…”
Section: Effect Of Absorbing Layer Thicknessmentioning
confidence: 99%
“…In addition, figure 8(a) shows that the effect of CsSnI 3 thickness on the variance in Voc. In order to better understand and demonstrate the Voc kinetics, we will emphasize the relationship between Voc and Jsc here [50]. This type of dependency will be demonstrated in equation ( 4):…”
Section: Effect Of the Thickness Of The Perovskite Layermentioning
confidence: 99%