Modelling and comparative performance analysis of tin based mixed halide perovskite solar cells with IGZO and CuO as charge transport layers

Abstract

Summary n this study, SCAPS 1D software package is used for modelling tin based mixed halide perovskite solar cells (PSCs) with IGZO and CuO as electron transport material and hole transport material, respectively. Photovoltaic performance parameters of these PSCs are compared to that of pure lead based and lead‐free PSCs with the same charge transport layers. The study shows that the pure tin‐based PSCs are superior in performance to other device configurations. IGZO and CuO are found to be better substitutes for the commonly used unstable and expensive transport layers, TiO2 and SpiroMeOTAD. The study also shows that back metal contacts with work function above 5.5 eV provides stable performance parameters. The study includes an analysis of the influence of various input parameters of the perovskite absorber layer‐ thickness, dopant concentration, total defect density, band gap and electron affinity‐ on the photovoltaic performance parameters. PSCs with MASnI3 as absorber layer show the best performance with a fill factor (FF) and a power conversion efficiency (PCE) of 68.38% and 25.08%, respectively. The effect of internal resistances and temperature dependence are also analysed. For PSCs with single halide perovskites as absorber layer, even a low value of series resistance of 5 Ω cm2 degrades the performance of the device and a large value of shunt resistance of 5000 Ω cm2 enhances the performance parameters of the device.

A Comprehensive Analysis of Eco‐Friendly Cs2SnI6 Based Tin Halide Perovskite Solar Cell through Device Modeling

“…The metal contact and hole transport material interface in practice exhibits ohmic or rectifying characteristics impeding the transport of holes. [ 64–66 ] Therefore, various back metal contacts with different work functions were studied, which can be employed as anode materials in the proposed Cs 2 SnI 6 perovskite solar cell. The potential energy barrier at the hole transport material and back metal contact interface is governed by the relation $$$$\begin{equation} {V}_{\rm{b}} = \frac{{{E}_{\rm{g}}}}{q} + \chi - {\phi }_{\rm{m}}\end{equation}$$$$where χ is the electron affinity and ϕ m is the metal work function.…”

“…The metal contact and hole transport material interface in practice exhibits ohmic or rectifying characteristics impeding the transport of holes. [64][65][66] Therefore, various back metal con-tacts with different work functions were studied, which can be employed as anode materials in the proposed Cs 2 SnI 6 perovskite solar cell. The potential energy barrier at the hole transport material and back metal contact interface is governed by the relation…”

Understanding the role of inorganic carrier transport layer materials and interfaces in emerging perovskite solar cells

“…Device simulations have predicted that Cu 2 O has the ability to improve the PCE to over to 25% by tuning the bandgap [470][471][472] due to its high mobility despite the complications in its synthesis. However, control over the interface properties has become a key obstacle in this development.…”

Performance Enhancement of PbS‐TBAI Quantum Dot Solar Cell with MoTe2 as Hole Transport Layer

“…It is evident from Figure 5c,d that the FF and J sc of the device architecture are high at low temperatures and then decline as a result of light‐induced degradation. [ 29–31 ] All the four parameters of solar cell are affected by temperature, and they decrease linearly with rising temperatures, as shown in Figure 5a–d.…”