In the recent decade, the organic-inorganic hybrid and metal halide perovskite materials have shown tremendous property tunability and capacity to harvest solar energy efficiently via conceptually new solar cell architectures....
Perovskite light absorbers have drawn
attention worldwide for optoelectronic
devices due to their solution-processable photovoltaic properties,
high carrier mobility, broad spectral range, and integration with
a wide range of substrates, etc. A facile NiO/CH3NH3PbI3 heterojunction was fabricated in an ambient
environment for self-powered and high-performance photodetector (PD)
application. The self-powered PD showed a high responsivity of 33.39
mA/W for UV light and 5.79 mA/W for white light at zero bias, which
further increases up to 28.6 A/W for UV light and 29.2 A/W for white
light at +1 V. Subsequently, the detectivity for an entire UV and
visible spectrum was observed to be above 1010 Jones at
zero bias. Interestingly, the stability study for PDs in the air up
to 38 days revealed the highest photoresponsivity of 40.56 mA/W at
zero bias. This enhancement is attributed to the intrinsic modification
within metal halide perovskites that lead to optimized PbI2 content. Additionally, a systematic study of X-ray diffraction patterns
at an interval of days revealed the presence of PbI2 content.
Further, the photodetection ability was retained for up to 58 days
with a decrease in light current without encapsulation. Our results
indicate that a NiO/CH3NH3PbI3 heterojunction-based
PD paves the way for ambient friendly, high-performance, self-powered,
stable optoelectronic applications.
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