Simulation of Total Ionising Dose in MOS capacitors

Fernández-Martínez, P.; Cortés, I.; Hidalgo, S.; Flores, D.; Palomo, F.R.

doi:10.1109/sced.2011.5744251

Cited by 15 publications

(14 citation statements)

References 12 publications

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“…We believe that the accelerated degradation under reverse bias has two reasons. First, the yield Y of electron-hole pairs that escape prompt recombination, given by [23]…”

Section: Discussionmentioning

confidence: 99%

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Zeiler

Nasr-storey

Détraz

et al. 2017

IEEE Trans. Nucl. Sci.

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Radiation-hard optical links are the backbone of read-out systems in high-energy physics (HEP) experiments at CERN. The optical components must withstand large doses of radiation and strong magnetic fields and provide high data rates. Radiation hardness is one of the requirements that become more demanding with every new generation of HEP experiment. Previous studies have shown that vertical cavity surface emitting lasers, on which the current optical links are based, will not be able to withstand the expected radiation levels in the innermost regions of future HEP experiments. Silicon photonics (SiPh) is currently being investigated as a promising alternative technology to address this challenge. We irradiated SiPh Mach-Zehnder modulators (MZMs) with different design parameters to evaluate their resistance against ionizing radiation. We confirm that SiPh MZMs with a conventional design do not show a phase shift degradation when exposed to a 20-MeV neutron fluence of 3 • 10 16 n/cm 2. We further demonstrate that custom-designed MZMs with shallow etch optical waveguides and high doping concentrations in their p-n junctions exhibit a strongly improved radiation hardness over devices with a conventional design when irradiated with X-rays. We also found that MZMs withstood higher radiation levels when they were irradiated at a low temperature. In contrast, larger reverse biases during irradiation led to a faster device degradation. Simulations indicate that a pinch-off of holes is responsible for the device degradation. Photodiodes (PDs) were also tested for their radiation hardness as they are needed in silicon photonic transceivers. X-ray irradiation of building-block germanium-silicon PDs showed that they were not significantly affected.

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“…We believe that the accelerated degradation under reverse bias has two reasons. First, the yield Y of electron-hole pairs that escape prompt recombination, given by [23]…”

Section: Discussionmentioning

confidence: 99%

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Zeiler

Nasr-storey

Détraz

et al. 2017

IEEE Trans. Nucl. Sci.

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“…The effects of oxidetrap charges and interface trap charges on the varactors with respect to bias voltage are analyzed in detail in [42]. During irradiation, the radiation induced negative charges (oxide-trap and interface trap) result into reduction of the width of the depletion region, which in turn increases the capacitance of the varactors [29,43]. This radiation-induced effect is counteracting previous g m induced increase in frequency.…”

Section: Resultsmentioning

confidence: 99%

Radiation Tolerant Electronics, Volume II

2023

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“…Other, smaller contributions may come from the shaping stage, as discussed later on). At higher total ionizing doses, the further increase of positive charge concentration in the oxide bulk is likely to be compensated by the increase in interface trap concentration [12], hence accounting for the much smaller variation detected in the signal amplitude after the second and the last irradiation steps. As far as the shaping stage is concerned, a shift in the threshold voltage of the N-type transistor M 2 in the current mirror feedback network may determine a change in the mirror ratio, therefore explaining the faster return to baseline of the signal detected after irradiation with 1 Mrad(SiO 2 ) and 3 Mrad(SiO 2 ) γ-ray doses.…”

Section: B Tests With γ-Raysmentioning

confidence: 99%

“…The device can only be operated in accumulation (right region of the characteristic) or depletion mode (left region). Radiation-induced trapping of holes in the oxide of the capacitor structure may be responsible for shifting the characteristic towards the left, since the increase of the positive charge density in the oxide, for a given DC voltage, would push the device closer to (or deeper into) the accumulation region [12]. Since in the charge preamplifier, the DC voltage of the C F capacitor is held to 0 by the feedback network, positive charge accumulation in the oxide would lead to an increase in the capacitance.…”

Section: B Tests With γ-Raysmentioning

confidence: 99%

Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons

Ratti¹,

Traversi²,

Zucca³

et al. 2013

2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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Monolithic active pixel sensors featuring a timeinvariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to 10 14 1 MeV neutron equivalent/cm 2 to test the device tolerance to bulk damage also for different values of the epitaxial layer resistivity. Moreover, samples of the same device have been irradiated with γ-rays from a 60 Co source, reaching a final dose exceeding 10 Mrad, to study ionizing radiation effects. This work discusses the test results, obtained through different measurement techniques, and the mechanisms underlying performance degradation in irradiated quadruple well CMOS MAPS.

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Simulation of Total Ionising Dose in MOS capacitors

Cited by 15 publications

References 12 publications

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Radiation Tolerant Electronics, Volume II

Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons

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