Simulation of Radiation Damage in Solids

Wood, S.; Doyle, N; Spitznagel, J.A.; Choyke, W. J.; More, R.M.; McGruer, J.N.; Irwin, R. B.

doi:10.1109/tns.1981.4335684

Cited by 34 publications

(21 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The increase of the introduction rates of the single vacancies, di-vacancies (also suggested by Corbett 43 ), and tri-vacancies seems to have a saturation behavior for energies higher than 15 MeV, in agreement with the results of Wood et al 44 showing that primary knock on atoms (PKA's) above 12 keV are converting into lower-energy sub-cascades and point defects.…”

Section: Defect Investigationssupporting

confidence: 87%

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Radu

Pintilie

Nistor

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above ∼15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V3). Similar to V3, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the “effective NIEL” using results from molecular dynamics simulations.

show abstract

Section: Defect Investigationssupporting

confidence: 87%

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Radu

Pintilie

Nistor

et al. 2015

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Wood [10] and More [11] performed displacement damage simulations and measurements that are relevant to the present modeling. Their key finding is that, for a given primary knock-on atom (PKA) of sufficient energy, the ratio of the energy deposited into the production of defects contained in subclusters to the energy deposited into the production of isolated defects is essentially constant and independent of PKA energy.…”

Section: B Clustered and Isolated Defectsmentioning

confidence: 99%

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Srour

Palko

2006

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

A framework is presented for understanding carrier generation and recombination mechanisms in irradiated silicon devices. Data obtained by many workers for irradiated bulk material and devices are analyzed and summarized, and key damagefactor dependences are identified. Measurements, simulations, and analyses support the conclusion that correlation of displacement damage effects with the rate of nonionizing energy loss (NIEL) for proton, neutron, pion, and heavy-ion bombardment is due to the dominant influence of defect subclusters. At low NIEL values ( 5 10 5 MeV-cm 2 /g), isolated defects dominate the electrical properties. At relatively high NIEL ( 2 10 4 MeV-cm 2 /g), subclusters dominate. Enhanced carrier generation and recombination produced by those small disordered regions is considered. Modeling results are presented for behavior observed in the transition region between domination by isolated defects and by clusters. The model presented in this paper simultaneously accommodates defect cluster models and NIEL scaling phenomena in the same framework.

show abstract

“…Even though in the end only a small fraction 3 of the total energy deposition goes into the displacement of atoms (non{ionizing energy loss, NIEL), depending on the energy of the PKA, a large numberof crystal defects may beproduced in a tree{like structure [34,35,36]. The initial displacement damage is produced on the fast collision time scale of about 10 14 s to 10 12 s [35] and is complete before any thermally activated atomic motions take place. At a slower time scale, the generated vacancies and interstitials will move around and most of them ( 95%) will recombine due to diusion processes (short term annealing).…”

Section: Displacement Damage and Non{ionizing Energy Lossmentioning

confidence: 99%

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Beringer

Borer

Mommsen

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

View full text Add to dashboard Cite

We present the nal results of radiation hardness and life time studies of Light Emitting Diodes (LEDs) and Vertical Cavity Surface Emitting Laser diodes (VCSELs). Following the encouraging results obtained in a previous life time test of neutron irradiated LEDs, we built an automatic measurement system in order to make long term tests with a large numberof irradiated devices feasible. After irradiating about 170 LEDs from two dierent manufacturers and about 140 VCSELs with neutron and proton uences as high (and in some cases about twice as high) as those expected at the inner tracker of ATLAS, we report on the radiation damage, the conditions required for its annealing, and we present post{irradiation failure rates for LEDs and VCSELs. The life time after irradiation was investigated by operating the diodes at an elevated temperature of 50 C for several months, resulting in operating times corresponding to up to 70 years of operation in the ATLAS SCT. From our measurements we calculate radiation damage constants and we nd a proton{ to{neutron damage ratio of 3:2 0:1 in GaAs for 24 GeV protons and for the neutrons with a peak energy of about 1 MeV available at the RAL ISIS facility. This result is in excellent agreement with recent NIEL calculations and provides an important c heck of the NIEL hypothesis.

show abstract

Simulation of Radiation Damage in Solids

Cited by 34 publications

References 5 publications

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Radiation hardness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT

Contact Info

Product

Resources

About