A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Srour, J. R.; Palko, James W.

doi:10.1109/tns.2006.885796

Cited by 70 publications

(37 citation statements)

References 52 publications

(117 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using 100 separate simulations of the mean damage, we calculated the sample mean presented in the Table. It is interesting to note that the mean damage energy per pixel calculated using the NIEL value in Fig. 1 (based on the analytic Ziegler Biersack Littmark (ZBL) method [20]) agrees to within 17% with the value obtained using the MRED Monte Carlo runs.…”

Section: Nuclear Elastic Reactionssupporting

confidence: 60%

Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe

Marshall

Howe

et al. 2007

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Abstract-This paper presents a combined Monte Carlo and analytic approach to the calculation of the pixel-to-pixel distribution of proton-induced damage in a HgCdTe sensor array and compares the results to measured dark current distributions after damage by 63 MeV protons. The moments of the Coulombic, nuclear elastic and nuclear inelastic damage distributions were extracted from Monte Carlo simulations and combined to form a damage distribution using the analytic techniques first described in [I]. The calculations show that the high energy recoils from the nuclear inelastic reactions (calculated using the Monte Carlo code MCNPX [2]) produce a pronounced skewing of the damage energy distribution. While the nuclear elastic component (also calculated using the MCNPX) contributes only a small fraction of the total nonionizing damage energy, its inclusion in the shape of the damage across the array is significant. The Coulombic contribution was calculated using MRED 13-51, a Geant4 [4,6] application. The comparison with the dark current distribution strongly suggests that mechanisms which are not linearly correlated with nonionizing damage produced according to collision kinematics are responsible for the observed dark current increases. This has important implications for the process of predicting the on-orbit dark current response of the HgCdTe sensor array.

show abstract

Section: Nuclear Elastic Reactionssupporting

confidence: 60%

Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe

Marshall

Howe

et al. 2007

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…At these temperatures, the vibration of the atoms in the lattice increases, and this additional energy provides a mechanism by which an interstitial can migrate to a nearby vacancy and eliminate both defects by recombination. [125][126][127][128] The NIEL discussed earlier is used to describe the rate of energy loss due to atomic displacements as a particle traverses the GaN layers. The product of the NIEL and the particle fluence (time-integrated flux) gives the displacement damage energy deposition per unit mass of material.…”

Section: Displacement Damagementioning

confidence: 99%

“…111 With some manipulation of the output files, TRIM can also be employed to calculate NIEL. [125][126][127] The TRIM output gives the vacancy production rate as a function of position as the incident proton slows down in the target material. Combining these data with the total energy loss data, the vacancy production rate as a function of proton energy can be found.…”

Section: Displacement Damagementioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

View full text Add to dashboard Cite

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

show abstract

“…Proton inelastic interaction cross sections are close together between 1 0 MeV and 60 MeV and might be more relevant to assess spike density increase. Electron-induced displacement damage had already been reported to scale poorly with proton NIEL on CCDs [12][13], although not up to the extent observed in this article. The difference between the isolated point defects created by electrons and the clustered defects generated by protons has been proposed to explain these phenomena.…”

Section: Discussionmentioning

confidence: 47%

Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor

Hervé¹,

Beaumel²,

Aken³

2009

2009 European Conference on Radiation and Its Effects on Components and Systems

View full text Add to dashboard Cite

We present the key results of multiple radiation characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at room and low temperature. This gives us the opportunity to discuss the influence on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and non-ionizing energy loss (NIEL) scaling between electron and proton irradiations.

show abstract

A Framework for Understanding Displacement Damage Mechanisms in Irradiated Silicon Devices

Cited by 70 publications

References 52 publications

Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe

Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe

Review—Ionizing Radiation Damage Effects on GaN Devices

Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor

Contact Info

Product

Resources

About