Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor

Abstract

We present the key results of multiple radiation characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at room and low temperature. This gives us the opportunity to discuss the influence on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and non-ionizing energy loss (NIEL) scaling between electron and proton irradiations.