Simulation of high efficiency SnS-based solar cells with SCAPS

Minbashi, Mehran; Ghobadi, Arash; Ehsani, M.H.; Dizaji, H. Rezagholipour; Memarian, Nafiseh

doi:10.1016/j.solener.2018.10.058

Cited by 128 publications

(62 citation statements)

References 40 publications

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“…The values of the material parameters for the numerical calculations are adopted from the literature. [ 20,22,41,45,50,59,60,65–69 ] The thermal velocities of electrons and holes are assumed to be ≈1 × 10 7 cm s −1 . [ 50,70 ] The values of absorption coefficient allocated for the Sb 2 Se 3 absorber and the SnS HTL materials are taken from the literature, [ 20,71 ] whereas the absorption coefficient values of CdS and SnO 2 are selected from SCAPS‐1D software.…”

Section: Device Simulation and Materials Propertiesmentioning

confidence: 99%

“…[ 53–55 ] Several advantages, such as nontoxicity, earth‐abundant, suitable energy bandgap, high absorption coefficient, high carrier mobility, and low cost, make the SnS as a promising candidate for the HTL in the thin‐film heterojunction solar cells. [ 56–59 ] In the present work, the SnS as the HTL is proposed to the basic Sb 2 Se 3 ‐based heterojunction TFSC.…”

Section: Introductionmentioning

confidence: 99%

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Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

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Section: Device Simulation and Materials Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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“…Light film solar cells are identified as second-generation solar cells and are further practical than the original solar cells. These solar cells have an extremely thick, thin light retention layer, while the original silicon wafer cells have a light incident layer [17]. These advances have reduced the number of dynamic materials in the battery.…”

Section: Second Generation Thin-film Solar Cellmentioning

confidence: 99%

Advanced selection materials in solar cell efficiency and their properties - A comprehensive review

Alarifi

2023

Materials Today: Proceedings

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Solar cell layers technology has achieved global standing in the solar cell layers deposition process, and it covers the innovative methods and techniques in significant applications. Recent solar cell layers technology has an advanced interest in a refined approach to enhance performance and highlights the importance of recent proficient procedures for manufacturing. For example, the application is used to search for novel materials for solar cells' layers to clarify the current energy crisis. The technological process and various types of solar cells depend on climate change. Among them, layers of solar cells and silicon wafer solar cells are very encouraging. Solar cell layers technology has led to solar cells being a more reasonable active option in design and production. The productivities facilitated by new solar cells still need to be enhanced for the various processes involved in the additional enhancement from Copper Indium Gallium Selenide (CIGS) microfilms to solar cell crystal structure dye-sensitized solar cells. The hydrophobic coating works as an anti-dust coating, enhancing efficiency and decreasing the cost of cleaning solar cells. In Saudi Arabia Majmaah City, most solar projects are in dry regions, where the dusty weather reduces solar cell efficiency. Therefore, combining these two properties and applying an anti-reflective and superhydrophobic coating will increase solar cell efficiency by 20%. Solar cells' crystal structure results are substituted with layers or new materials to balance environmental impact and toxic nature.

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“…Right and left contact work function are 4.8 eV (ITO) and 5.1 eV (Au), respectively. Pre-factor for Cs 2 AgBiBr 6 is set to 2.62×10 4 cm −1 eV −1/2 to acquire absorption coefficient, , as computed by = (ℎ − ) The material parameters for the simulation are carefully selected from reported works (Wu et al 2018;Ganvir 2016;Xu et al 2019;Zhao et al 2019;Minemoto et al 2019;Coulibaly et al 2019;Minbashi et al 2018), as summarized in Table 1.…”

Section: Device Structure and Simulation Parametersmentioning

confidence: 99%

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

2021

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Double perovskite, Cs 2 AgBiBr 6 , is introduced as a lead-free perovskite solar cell. Device modeling of Cs 2 AgBiBr 6 (DP) was accomplished to obtain the optimum parameters using the Solar Cell Capacitance Simulator (SCAPS). Two devices with two different hole transport layers (HTLs) were investigated, including P 3 HT and Cu 2 O. For both devices with different HTLs, an optimal thicknesses of 1200 nm and defect densities of 1.0 ×10 14 cm -3 for DP layer were attained. For both HTLs, conduction band offset, CBO, is -0.21 eV and valence band offset, VBO, is +0.16 eV. For shallow acceptor doping concentration of P 3 HT and Cu 2 O, the values of 5.0 × 10 19 and 5.0 × 10 17 cm −3 were obtained, respectively. As far as the shallow donor density of electron transport layers (ETLs) is concerned, for both cases, the optimum value of 5.0 × 10 19 cm -3 were achieved. For capture cross section, , , in absorber layer for both HTLs, the optimal value at , of 10 −20 cm 2 for , (defect density of DP) is 10 16 cm −3 , at , of 10 −19 cm 2 for , is 10 15 cm −3 , at , of 10 −18 cm 2 for , is 10 14 cm −3 , at , of 10 −17 cm 2 for , is 10 13 cm −3 , and at , of 10 −16 cm 2 for , is 10 12 cm −3 . For P 3 HT device, the interface defect density of P 3 HT/Cs 2 AgBiBr 6 is occurred at 1.0×10 14 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 9 cm -2 . For Cu 2 O device, the interface defect density of Cu 2 O/ Cs 2 AgBiBr 6 is befallen at 1.0×10 13 cm -2 , and for Cs 2 AgBiBr 6 /SnO 2 is happened at 1.0×10 10 cm -2 . As for radiative recombination, for P 3 HT device, the optimal value is happened at 2.3×10 -13 cm 3 /s, however, for Cu 2 O device is occurred at 2.3×10 -12 cm 3 /s. Finally, for P 3 HT device, a maximum power conversion efficiency, PCE, of 11.69% (open-circuit voltage, V oc , of 2.02 V, short-circuit current density, J sc , of 6.39 mA/cm 2 , and fill-factor, FF, of 0.90 (90% )) were achieved, and for Cu 2 O device, a PCE of 11.32% (V oc of 1.97 V, J sc of 6.39 mA/cm 2 , and FF of 0.895 (89.5% )) were attained. This is the highest efficiency for Cs 2 AgBiBr 6 double perovskite solar cell which was achieved till now. Finally, our results are providing towards fabricating a lead-free and inorganic solar cell.Keywords Cs 2 AgBiBr 6 . Double perovskite solar cell. Lead-free perovskite. Conduction band offset (CBO). Valence band offset (VBO). SCAPS

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Simulation of high efficiency SnS-based solar cells with SCAPS

Cited by 128 publications

References 40 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Advanced selection materials in solar cell efficiency and their properties - A comprehensive review

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

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Simulation of high efficiency SnS-based solar cells with SCAPS

Cited by 128 publications

References 40 publications

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Advanced selection materials in solar cell efficiency and their properties - A comprehensive review

Numerical simulation of inorganic Cs2AgBiBr6 as a lead-free perovskite using device simulation SCAPS-1D

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Product

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Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer