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In this study, a hole transport layer (HTL)-free perovskite solar cell (PSC) structure with CH3NH3SnI3 as an active layer and TiO2 as an electron transport layer (ETL) has been proposed for the first time. The solar cell capacitance simulator in one dimension program has been carried out to design the proposed HTL-free CH3NH3SnI3-based PSC and simulate its performance. The output parameters of the proposed PSC, such as open circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency, and quantum efficiency, are evaluated by varying the physical parameters of various layers. The thermal stability of the proposed cell has also been analyzed. The thicknesses of the ETL and the absorber are optimized to be 0.05 and 1.0 µm, respectively. A conversion efficiency of 26.33% along with Voc of 0.98 V, Jsc of 31.93 mA/cm2, and an FF of 84.34% is obtained for the proposed HTL-free CH3NH3SnI3-based PSC. These simulation results would be helpful in fabricating highly efficient and inexpensive PSCs.

This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

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