Simulation of a 1550-nm InGaAsP-InP transistor laser

Abstract

A 1550 InGaAsP-InP multiple-quantum-well (MQW) transistor laser is numerically modeled. The proposed structure has a deep-ridge waveguide and asymmetric doping profile in the base (i.e. only the part below QWs of the base is doped) which provides good optical and electrical confinement and effectively reduces the lateral leakage current and optical absorption. The important physical models and parameters are discussed and validated by modeling a conventional ridge-waveguide laser diode and comparing the results with the experiment. The simulation results of the transistor laser demonstrate a low threshold (< 10 mA) and a > 25 % slope efficiency with the current gain of 2 ∼ 4. The optical saturation and voltage-controlled operation are also demonstrated.

Analysis of carrier dynamic effects in transistor lasers

“…Electrons injected from an emitter are diffused. 5 Faraji et al proposed a primary analytical model for small signal analysis by expanding the carrier transport model for laser diodes. With quantum wells incorporated in the base regions of bipolar transistors, the transistor laser possesses advantageous characteristics of high modulation bandwidth, fast spontaneous carrier lifetime, and high differential optical gain.…”