Analysis of carrier dynamic effects in transistor lasers

Abstract

Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/termsAbstract. We present an analytical model to analyze the influence of carrier dynamics on the static and dynamic responses of transistor laser (TL). Our analysis is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. We show that the details of the dc and small signal behavior of transistor lasers are strongly affected by the escape and capture times of carriers in quantum well (QW). Also, the effects of carrier recombination lifetime in the quantum well and base regions on the TL static and dynamic performances are investigated.

Impact of Dot Size on Dynamical Characteristics of InAs/GaAs Quantum Dot Lasers

“…Quantum dot laser (QDL) nano-devices due to the discrete density of states have a many good properties, namely, small threshold current, low temperature sensitivity, high optical gain and quantum efficiency, and high modulation bandwidth. Therefore, having a ubiquitous view of their energy states, carrier dynamics [9], and other physical features which affect the lasing process of a QD is instructive. Based on this fact, many research groups attempt to develop and optimize QDLs to fabricate optoelectronic devices with better performance [5,[10][11][12][13].…”