Simulation‐based design and experimental evaluation of a spatially controllable CVD reactor

Choo, Jae-Ouk; Adomaitis, Raymond A.; Rubloff, Gary W.; Henn-Lecordier, Laurent; Liu, Yijun

doi:10.1002/aic.10358

Cited by 14 publications

(10 citation statements)

References 28 publications

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“…While it is non-trivial to generate large composition variation in a CVD chamber, they can be achieved by controlling the flow of precursor gases. 60,61 Equally important to achieving compositional variations on the wafers is the need to achieve process parameter (i.e., pressure and flow) variations.…”

Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

223

189

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High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a "library" sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same "library" sample, they can be highly uniform with respect to fixed processing parameters. This article critically reviews the literature pertaining to applications of combinatorial materials science for electronic, magnetic, optical, and energy-related materials. It is expected that high throughput methodologies will facilitate commercialization of novel materials for these critically important applications. Despite the overwhelming evidence presented in this paper that high throughput studies can effectively inform commercial practice, in our perception, it remains an underutilized research and development tool. Part of this perception may be due to the inaccessibility of proprietary industrial research and development practices, but clearly the initial cost and availability of high throughput laboratory equipment plays a role. Combinatorial materials science has traditionally been focused on materials discovery, screening, and optimization to combat the extremely high cost and long development times for new materials and their introduction into commerce. Going forward, combinatorial materials science will also be driven by other needs such as materials substitution and experimental verification of materials properties predicted by modeling and simulation, which have recently received much attention with the advent of the Materials Genome Initiative. Thus, the challenge for combinatorial methodology will be the effective coupling of synthesis, characterization and theory, and the ability to rapidly manage large amounts of data in a variety of formats. V C 2013 AIP Publishing LLC. [http://dx

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Section: Advanced Gate Stack Materialsmentioning

confidence: 99%

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Green

Takeuchi

Hattrick‐Simpers

2013

Journal of Applied Physics

223

189

View full text Add to dashboard Cite

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“…In the case of CVD, we achieve this through a reactor design, 19 which employs a segmented gas injection showerhead with exhaust gas recirculation ͑Fig. 21 The present three-segment design of the CVD showerhead is intended to prove feasibility, validate models, and demonstrate control. With this design, we can produce desired gradients of gas impingement or deposition-or uniformity-across the wafer surface.…”

Section: Spatially Programmable Cvd "Sp-cvd…mentioning

confidence: 99%

“…21 Also, ͑2͒ high gas feeding rates will prevent gas diffusion ͑both ISM-wafer and ISM-BD͒ from other segments.…”

Section: A Mechanisms Of Intersegment Gas Diffusionmentioning

confidence: 99%

Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor

Cai

Henn-Lecordier

Rubloff

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inIn situ chemical sensing in Al Ga N ∕ Ga N metal organic chemical vapor deposition process for precision film thickness metrology and real-time advanced process control J. Vac. Sci. Technol. B 23, 2007 (2005 10.1116/1.2037707 In situ chemical sensing in Al Ga N ∕ Ga N high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control J. Vac. Sci. Technol. B 23, 1386 (2005 10.1116/1.1993616 Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ mass spectrometry Mass spectrometry has proven valuable in understanding and controlling chemical processes used in semiconductor fabrication. Given the complexity of spatial distributions of fluid flow, thermal, and chemical parameters in such processes, multipoint chemical sampling would be beneficial. The authors have designed and implemented a multiplexed mass spectrometric gas sampling system for real-time, in situ measurement of gas species concentrations at multiple locations in a spatially programmable chemical vapor deposition ͑SP-CVD͒ reactor prototype, where such chemical sensing is essential to achieve the benefits of a new paradigm for reactor design. The spatially programmable reactor, in which across-wafer distributions of reactant are programmable, enables ͑1͒ uniformity at any desired process design point, or ͑2͒ intentional nonuniformity to accelerate process optimization through combinatorial methods. The application of multiplexed mass spectrometric sensing is well suited to our SP-CVD design, which is unique in effectively segmenting the showerhead gas flows by using exhaust gas pumping through the showerhead for each segment. In turn, mass spectrometric sampling signals for each segment are multiplexed to obtain real-time signatures of reactor spatial behavior. Here the authors report results using inert gases to study the spatial distributions of species, validate SP-CVD reactor models, and lead to an understanding of fundamental phenomena associated with the reactor design. This forms the basis for using real-time mass spectrometry to drive process sensing, metrology, and control in such reactor systems.

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“…In the second example we consider data produced by the Programmable CVD reactor system [5,6,9,10], a reactor designed to test spatially controlled CVD concepts. The main feature of this system is its segmented showerhead design that allows independent control of feed gas composition to each segment.…”

Section: Model Comparison For the Spatially Programable Cvd Reactormentioning

confidence: 99%

“…In Taylor and Semancik [12], microhotplate devices were used to control the temperature in an array of micro-scale substrate samples; it was found that temperature gradients in the microhotplate supports resulted in a microstructurally graded film on the support legs. Finally, the Programmable Reactor system [5,6,9,10] features a segmented shower head design where each segment is fed individually with reactant gases and exhaust gas is pumped back up through each segment. This concept was tested in a three-zone prototype tungsten deposition system to evaluate the system's ability to manipulate gas phase composition across the wafer surface [5,6] and to demonstrate its true programmable nature using a modelbased approach to controlling spatial deposition patterns across the wafer surface [9,10].…”

Section: Combinatorial Cvdmentioning

confidence: 99%

Full-wafer mapping and response surface modeling techniques for thin film deposition processes

Leon

Adomaitis

2009

Journal of Crystal Growth

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Isr develops, applies and teaches advanced methodologies of design and analysis to solve complex, hierarchical, heterogeneous and dynamic problems of engineering technology and systems for industry and government.Isr is a permanent institute of the university of maryland, within the a. James clark school of engineering. It is a graduated national science foundation engineering research center. AbstractComputational techniques for representing and analyzing full wafer metrology data are developed for chemical vapor deposition and other thin-film processing applications. Spatially resolved measurement data are used to produce "virtual wafers" that are subsequently used to create response surface models for predicting the full-wafer thickness, composition, or any other property profile as a function of processing parameters. Statistical analysis tools are developed to assess model prediction accuracy and to compare the relative accuracies of different models created from the same wafer data set. Examples illustrating the use of these techniques for film property uniformity optimization and for creating intentional film-property spatial gradients for combinatorial CVD applications are presented.

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Simulation‐based design and experimental evaluation of a spatially controllable CVD reactor

Abstract: Most conventional chemical vapor deposition (CVD) systems do not have the

Cited by 14 publications

References 28 publications

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials

Multiplexed mass spectrometry for real-time sensing in a spatially programmable chemical vapor deposition reactor

Full-wafer mapping and response surface modeling techniques for thin film deposition processes

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