Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A Modular Nano TCAD Simulation Framework

Abstract

The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconductor device performance and for guiding the fabrication technology. In this paper, we present the capabilities of the new flexible multi-scale nano TCAD simulation software called Nano-Electronic Simulation Software (NESS). NESS is designed to study the charge transport in contemporary and novel ultra-scaled semiconductor devices. In order to simulate the charge transport in such ultra-scaled devices with complex architectures and design, we have developed numerous simulation modules based on various simulation approaches. Currently, NESS contains a drift-diffusion, Kubo–Greenwood, and non-equilibrium Green’s function (NEGF) modules. All modules are numerical solvers which are implemented in the C++ programming language, and all of them are linked and solved self-consistently with the Poisson equation. Here, we have deployed some of those modules to showcase the capabilities of NESS to simulate advanced nano-scale semiconductor devices. The devices simulated in this paper are chosen to represent the current state-of-the-art and future technologies where quantum mechanical effects play an important role. Our examples include ultra-scaled nanowire transistors, tunnel transistors, resonant tunneling diodes, and negative capacitance transistors. Our results show that NESS is a robust, fast, and reliable simulation platform which can accurately predict and describe the underlying physics in novel ultra-scaled electronic devices.

Hierarchical simulation of nanosheet field effect transistor: NESS flow

“…The capability of NESS in simulating novel devices has been demonstrated earlier, e.g. [6][7][8][9][10]. The focus in the current abstract is the flow of the essential modules for the accurate simulation of the nanosheet transistors.…”

Self-oscillating parametric optical transducer based on quantum double-barrier heterostructure

“…Their characteristics and parameters determine both the quality of electronic products and the quality of information transmission and reception 7,8 . The use of quantum heterostructures as optical transducers based on tunnel-resonant diodes makes it possible to obtain negative differential resistance and ultra-high-frequency properties of these devices 9,10,11 . These properties of tunnel-resonant diodes are the basis for the development of a new class of optical transducers that work in the "optical power-frequency" conversion mode, which makes it possible to significantly improve their metrological performance 12 .…”

“…The analysis of formulas (9) shows that the greatest influence of the change in the optical power of the input signal acts on the differential negative resistance, since the own capacity and inductance of the diode also change due to the action of the optical signal, but their changes are four orders of magnitude smaller compared to the external capacity and inductance, so we do not take them into account. Thus, a change in the differential negative resistance causes a shift in the output frequency of the self-oscillating of the optical transducer.…”

Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source

“…Time and cost-effective computer simulation tools pave the way to experimental electronic device fabrication as they provide deep insight into the physics of device operation. The simulations presented in this work are performed self-consistently utilizing the NEGF solver of our Nano-Electronic Simulation Software (NESS) framework [11][12][13][14][15]. NESS is designed to simulate quantum charge transport in ultra-scaled nanoelectronic devices using various integrated solvers such as NEGF, drift-diffusion, and Kubo-Greenwood formalism where the corresponding transport modules are solved self-consistently within the Poisson equation.…”