In this work, we have developed a solver for the three-dimensional density gradient (DG) equation which is used to apply quantum corrections (QC) to the classical drift-diffusion (DD) simulator in a self-consistent manner. This module has been implemented in C++ using the finite volume method and has been incorporated into NESS (Nano-Electronic Simulation Software) which is being developed in the Device Modelling Group, University of Glasgow. Here, we summarise the implementation details and particularly highlight the impact of the three anisotropic DG masses, which are used as fitting parameters, on the charge profiles and current-voltage (I-V) characteristics in nano-transistors.
Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (TCAD) tools has been an essential part of the semiconductor industry as well as academic research. Computational efficiency and accuracy of the numerical modeling are the key criteria on which quality and usefulness of a TCAD tool are ascertained. Further, the ability of the tools to incorporate different modeling paradigms and to be applicable to a wide range of device architectures and operating conditions is essential. In this paper, we provide an overview of the new device simulator NESS (Nano-Electronic Software Simulator) developed at the University of Glasgow's Device Modelling Group. It is a fast and modular TCAD tool with flexible architecture and structure generation capabilities, and contains different modules including classical, semi-classical, and quantum transport solvers, mobility calculation, kinetic Monte-Carlo and others. NESS can also take into account various sources of statistical variability in nanodevices and can perform simulations of thousands of microscopically different devices created by the structure generator. This state-of-the-art tool is designed to be open source and is being made available to the device engineering community at large for active collaboration and development.
Semiconductor devices have come a long way since the invention of the point contact transistor in 1947. These tiny devices transform and shape our lives and will continue to do so in ways we have yet to discover. Skills and knowledge in semiconductor devices are therefore essential for the development of a more sustainable world. Nevertheless, the ways we teach semiconductor devices are still rooted in 20th century textbooks and methods. Learning methods and materials therefore need to be updated so that students learn in ways that are appropriate for the global, dynamic and transnational environments in which they will work. Our methodology relied on using modern Technology CAD (TCAD) device simulations to revolutionize the teaching of semiconductor devices. Based on student responses, we believe that our methodology will enhance student employability and encourage student understanding of advanced semiconductor concepts, which are required for managing the global sustainability challenges. We demonstrate how the application of state-of-the art simulation and visualization CAD tools can be used to teach undergraduate students how to understand the basic principles of key electronic devices. We provide examples of teaching materials and assessment exercises that were used to assist student learning of semiconductor devices within a transnational education (TNE) programmed. Moreover, we believe that exposing students to modern industry software tools will help embed skills development and employability.
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