Statistical device simulations of III-V nanowire resonant tunneling diodes as physical unclonable functions source

Hierarchical simulation of nanosheet field effect transistor: NESS flow

“…The capability of NESS in simulating novel devices has been demonstrated earlier, e.g. [6][7][8][9][10]. The focus in the current abstract is the flow of the essential modules for the accurate simulation of the nanosheet transistors.…”