Simulation and Analysis of Carrier Dynamics in the InAs/GaAs Quantum Dot Laser, Based upon Rate Equations

Abstract

<p class="MsoNormal" style="text-align:justify;"> <span lang="EN-US">In this paper, simulation of InAs/GaAs quantum dot (QD) laser is performed based upon a set of eight rate equations for the carriers and photons in five energy states. Carrier dynamics in these lasers were under analysis and the rate equa</span><span lang="EN-US">tions are solved using 4th order Runge-Kutta method. We have shown that by increasing injected current to the active medium of laser, switching-on and stability time of the system would decrease and power peak and stationary power will be increased. Also, emission in any state will start when the lower state is saturated and remain steady. The results including P-I characteristic curve for the ground state (<i>GS</i>), first excited state (<i>ES</i>1), second excited state (<i>ES</i>2) and output power of the QD laser will be presented.</span> </p

Scrutiny of the dynamics of quantum dot semiconductor lasers

“…The output then increases slowly and reaches constant value as Γ varies between 0.04 and 0.1almost reached constant value at Γ =0.2, see fig. (7). Through the range of the spontaneous emission factor, , (10 −10 − 10 −1 ) we did not sense clear effect of on the dynamics of the QDL except on the highest…”

“…The numerical model used in this work is based on the work of Yazdani etal [5], Wang etal [6], Darai etal [7] and Grillot et.al. [8] [5][6][7][8] the QD laser dynamics can be described by the following set of equations:…”